BUL903EDFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 1 2 TO-220FP APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR 120 V MAINS IN PUSH-PULL CONFIGURATION ■ DESCRIPTION The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature September 2003 Value 900 400 7 5 8 2 4 35 1500 -65 to 150 150 Unit V V V A A A A W V o o C C 1/7 BUL903EDFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 3.57 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 900 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 µA Collector-Emitter Breakdown Voltage (V BE = 0) I C = 100 µA V (BR)CES Parameter V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 10 mA L = 25 mH Min. Typ. 900 V 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A I B = 50 mA I B = 0.15 A I B = 0.4 A 0.5 1 1.5 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A I B = 50 mA I B = 0.15 A I B = 0.4 A 1 1.1 1.2 V V V DC Current Gain IC IC IC IC V CE = V CE = V CE = V CE = h FE ∗ 10 mA 0.25 A 0.5 A 2.5 A 5 5 5 5 V V V V RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time V CC = 125 V I B1 = 50 mA t p = 300 µs (see figure 1) I C = 0.7 A I B2 = 0.4 A E ar Repetitive Avalanche Energy V CC = 50V V BE = -5 V (see figure 2) C = 1.8 nF L = 2 mH VF Parallel Diode Forward I F = 2 A Voltage td tr ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 = = = = 20 40 28 8 70 60 16 0.2 1 0.8 0.25 6 µs µs µs µs mJ 1.2 V BUL903EDFP Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector Emitter Saturation Voltage 3/7 BUL903EDFP Base Emitter Saturation Voltage Switching Times Resistive Load Switching Times Inductive Load Reverse Biased SOA 4/7 BUL903EDFP Figure 1: Resistive Load Switching Test Circuit Figure 2 : Energy Rating Test Circuit Figure 3: Inductive Load Switching Test Circuit 5/7 BUL903EDFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 6/7 L4 BUL903EDFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7