STMICROELECTRONICS BUL742

BUL742
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
LARGE RBSOA
APPLICATIONS
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
3
■
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
900
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage
(I C = 0, I B = 0.75 A, t p < 10µs, T j < 150 o C)
BV EBO
V
4
A
IC
I CM
IB
Collector Current
Collector Peak Current (t p <5 ms)
8
A
Base Current
2
A
4
A
I BM
Base Peak Current (t p <5 ms)
P tot
o
T stg
Tj
June 2001
Total Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
70
W
-65 to 150
o
C
150
o
C
1/5
BUL742
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.78
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CES
Parameter
Collector Cut-off
Current (V BE = 0)
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Test Conditions
Min.
Typ.
V CE = 900 V
I C = 100 mA
L = 25 mH
Max.
Unit
100
µA
400
V
12
V
BV EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 1 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 4 A
I B = 0.2 A
I B = 0.4 A
I B = 0.8 A
0.5
1.0
1.5
V
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 2 A
I B = 0.4 A
1.5
V
DC Current Gain
I C = 250 mA
IC = 2 A
V CE = 5 V
V CE = 5 V
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
V CC = 125 V
I B1 = 45 mA
t p = 300 µs
I C = 0.5 A
I B2 = -45 mA
E sb
Avalanche Energy
L = 2 mH
h FE ∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Energy Rating Test Circuit
2/5
35
10
70
35
11
250
6
µs
ns
mJ
BUL742
Safe Operating Areas
Derating Curve
Reverse Biased SOA
3/5
BUL742
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
4/5
BUL742
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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