STMICROELECTRONICS BUL903ED

BUL903ED
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
APPLICATIONS
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
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DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
900
V
V CEO
Collector-Emitter Voltage (IB = 0)
400
V
V EBO
Emitter-Base Voltage (IC = 0)
7
V
Collector Current
5
A
Collector Peak Current (t p <5 ms)
8
A
A
IC
I CM
Base Current
2
I BM
Base Peak Current (t p <5 ms)
4
A
P tot
Total Dissipation at Tc = 25 o C
70
W
T stg
Storage Temperature
IB
Tj
Max. Operating Junction Temperature
February 2001
-65 to 150
o
C
150
o
C
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BUL903ED
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.8
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 900 V
I EBO
Base-Emitter Leakage
Current
V EB = 7 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 10 mA
L = 25 mH
Min.
Typ.
Max.
Unit
1
mA
100
µA
400
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 1 A
I B = 0.15 A
1.0
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.1 A
I C = 0.5 A
I C = 2.0 A
I B = 0.05 A
I B = 0.1 A
I B = 0.4 A
1.0
1.1
1.2
V
V
V
DC Current Gain
I C = 5 mA
I C = 0.5 A
V CE = 10 V
V CE = 3 V
Parallel Diode Forward
Voltage
IF = 3 A
1.2
V
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
V CC = 125 V
I B1 = 0.05 A
t p = 300 µs
I C = 0.7 A
I B2 = 0.4 A
0.2
1.0
0.8
0.25
µs
µs
µs
µs
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
V CC = 125 V
I B1 = 0.045 A
t p = 300 µs
I C = 0.5 A
I B2 = 0.5 A
0.2
0.5
0.8
0.5
µs
µs
µs
µs
T RR
Diode Reverse
Recovery Time
IF = 1 A
V DD = 30 V
di/dt = 100 A/µs
E sb
Avalanche Energy
L = 2 mH
h FE ∗
VF
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
8
20
300
6
ns
mJ
BUL903ED
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL903ED
Reverse Biased SOA
Resistive Load Switching Test Circuit
Energy Rating Test Circuit
4/6
BUL903ED
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
BUL903ED
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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