TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 65 W Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C © 2008 Fairchild Semiconductor Corporation TIP41/TIP41A/TIP41B/TIP41C Rev. A www.fairchildsemi.com 1 TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO Parameter Test Condition * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C IC = 30mA, IB = 0 Min. Max. 40 60 80 100 Units V V V V Collector Cut-off Current : TIP41/41A : TIP41B/41C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA Collector Cut-off Current : TIP41 : TIP41A : TIP41B : TIP41C VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 400 400 400 400 μA μA μA μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A ICES 30 15 75 VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA, f = 1MHz 3.0 MHz * Pulse Test: PW≤300ms, Duty Cycle≤2% © 2008 Fairchild Semiconductor Corporation TIP41/TIP41A/TIP41B/TIP41C Rev. A www.fairchildsemi.com 2 TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor Electrical Characteristics TC=25°C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 PC[W], POWER DISSIPATION 100 IC(MAX) (PULSE) 10 ms 0.5 s 5m IC(MAX) (DC) s 1m IC[A], COLLECTOR CURRENT 100 1 TIP41 VCEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX. 0.1 80 60 40 20 0 1 10 100 0 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area © 2008 Fairchild Semiconductor Corporation TIP41/TIP41A/TIP41B/TIP41C Rev. A 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor Typical Characteristics TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation TIP41/TIP41A/TIP41B/TIP41C Rev. A www.fairchildsemi.com 4 TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation TIP41/TIP41A/TIP41B/TIP41C Rev. A www.fairchildsemi.com 5