TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP29 : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 3 A IB Base Current 0.4 A PC Collector Dissipation (TC=25°C) 30 W Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 1 TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collector Cut-off Current : TIP29/29A : TIP29B/29C Test Condition IC = 30mA, IB = 0 Min. Max. 40 60 80 100 Units V V V V VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 200 200 200 200 μA μA μA μA 1.0 mA Collector Cut-off Current : TIP29 : TIP29A : TIP29B : TIP29C IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE *DC Current Gain VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A 40 15 75 VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V VBE(sat) *Base-Emitter Saturation Voltage VCE = 4V, IC = 1A 1.3 V fT Current Gain Bandwidth Product VCE = 10V, IC = 200mA 3.0 MHz * Pulse Test: PW≤300ms, Duty Cycle≤2% © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 2 TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor Electrical Characteristics TC=25°C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT 100 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 40 10 PC[W], POWER DISSIPATION 1 DC s 5m IC(MAX) (DC) s 1m IC[A], COLLECTOR CURRENT 35 IC(MAX) (PULSE) TIP29 VCEO MAX. TIP29A VCEO MAX. TIP29B VCEO MAX. TIP29C VCEO MAX. 30 25 20 15 10 5 0 0.1 10 0 100 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor Typical Characteristics TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 4 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 5