FJP5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 TO-220 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter TC=25°C unless otherwise noted Parameter Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A PC Collector Dissipation. 85 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ordering Information Part Number Marking Package Packing Method FJP5555TU J5555 TO220 TUBE © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 Remarks www.fairchildsemi.com 1 FJP5555 — NPN Silicon Transistor March 2008 Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC=500mA, IE=0 1050 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V BVEBO Emitter-Base Breakdown Voltage IE=500mA, IC=0 14 V DC Current Gain VCE=5V, IC=10mA 10 VCE=3V, IC=0.8A 20 hFE VCE(sat) * Collector-Emitter Saturation Voltage 40 IC=1A, IB=0.2A 0.5 V IC=3.5A, IB=1.0A 1.5 V 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC=3.5A, IB=1.0A Cob Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time VCC=125V, I C=0.5A IB1=45mA, IB2=0.5A RL=250W tF Fall Time tON Turn On Time tSTG Storage Time tF Fall Time EAS Avalanche Energy 45 VCC=250V, I C=2.5A IB1=0.5A, IB2=1.0A RL=100W 6 L= 2mH pF 1.0 ms 1.2 ms 0.3 ms 2.0 ms 2.5 ms 0.3 ms mJ * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 www.fairchildsemi.com 2 FJP5555 — NPN Silicon Transistor Electrical Characteristics * TC=25°C unless otherwise noted 5.0 100 o Ta = 75 C 4.5 VCE = 5V o Ta = 125 C IC [A], COLLECTOR CURRENT 4.0 hFE, DC CURRENT GAIN IB = 600mA 3.5 3.0 IB = 200mA 2.5 2.0 IB = 100mA 1.5 1.0 o Ta = 25 C o Ta = - 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 1 1E-3 9 0.01 VCE [V], COLLECTOR-EMITTER VOLTAGE 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 o Ta = 125 C o Ta = 75 C 1 o Ta = - 25 C o Ta = 25 C 0.1 0.01 0.01 0.1 1 IC = 5 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB o o Ta = - 25 C 1 o Ta = 125 C o Ta = 75 C 0.1 0.01 0.01 10 Ta = 25 C 0.1 IC [A], COLLECTOR CURRENT 1 Figure 3. Saturation Voltage Figure 4. Saturation Voltage tSTG & tF [us], SWITCHING TIME tSTG & tF [us], SWITCHING TIME 1 tSTG 0.1 tF VCC=125V tSTG 1 tF 0.1 VCC=250V IB1=45mA, IB2=0.5A 0.01 0.1 IB1=0.5A, IB2=1.0A 0.01 0.1 1 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Figure 6. Resistive Load Switching © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 10 IC [A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJP5555 — NPN Silicon Transistor Typical Characteristics 100 IC [A], COLLECTOR CURRENT 90 PC[W], POWER DISSIPATION 10 VCC=50V, L=1mH 80 70 60 50 40 30 20 10 IB1=3A, RB2=0 1 10 100 0 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating IC[A], COLLECTOR CURRENT 100 ICP(max) 10 IC(max) 100ms 10ms DC 1 0.1 o Tc=25 C Single Pulse 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 www.fairchildsemi.com 4 FJP5555 — NPN Silicon Transistor Typical Characteristics (Continued) FJP5555 — NPN Silicon Transistor Mechanical Dimensions TO220 © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 www.fairchildsemi.com 5 FJP5555 NPN Silicon Transistor © 2007 Fairchild Semiconductor Corporation FJP5555 Rev. 1.0.0 www.fairchildsemi.com 6