FJP5200 Audio Power Amplifier Features • • • • High Current Capability: IC = 15A High Power Dissipation Wide S.O.A Complement to FJP1943 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current 15 A IB Base Current 1.5 A TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Ta=25°C unless otherwise noted Parameter Max. Units PD Total Device Dissipation(TC=25°C) Derate above 25°C 100 0.8 W W/°C RθJC Thermal Resistance, Junction to Case 1.25 °C/W * Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. * With infinite heatsink. © 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 1 FJP5200 — Audio Power Amplifier July 2008 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 μA IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 μA hFE1 DC Current Gain* VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 360 pF 160 60 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% *hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 2 FJP5200 — Audio Power Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted FJP5200 — Audio Power Amplifier Typical Characteristics IB=200mA 16 IB = 180mA IB = 160mA IB = 140mA IB = 120mA 12 Vce=5V Tj=125? hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 100mA 10 8 IB = 80mA 6 IB = 60mA IB = 40mA 4 2 0 IB = 0 -2 -2 0 2 4 6 8 10 12 14 16 18 Tj=25? 100 Tj=-25? 10 20 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain Vce(sat)[mV], SATURATION VOLTAGE Vbe(sat)[mV], SATURATION VOLTAGE Figure 1. Static Characteristic Ic=10Ib 1000 Tj=-25? Tj=25? Tj=125? 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic=10Ib 1000 100 Tj=125? Tj=25? Tj=-25? 10 10 0.1 1 Ic[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT Figure 4. Collector-Emitter Saturation Voltage Transient Thermal Resistance, Rthjc[ C / W] Figure 3. Base-Emitter Saturation Voltage 1.2 IC[A], COLLECTOR CURRENT o 10 VCE = 5V 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.8 0.6 0.4 0.2 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 o Case Temperature, TC[ C] VBE[V], BASE-EMITTER VOLTAGE Figure 6. Thermal Resistance Figure 5. Base-Emitter On Voltage © 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A 1.0 www.fairchildsemi.com 3 FJP5200 — Audio Power Amplifier Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 4 FJP5200 Audio Power Amplifier © 2008 Fairchild Semiconductor Corporation FJP5200 Rev. A www.fairchildsemi.com 5