FDB8860_ F085 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6m: Features Applications RDS(ON) = 1.9m: (Typ), VGS = 5V, ID = 80A 12V Automotive Load Control Qg(5) = 89nC (Typ), VGS = 5V Start / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Semiconductor Corporation FDB8860_F085 RevA 1 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET June 2010 Symbol VDSS Drain to Source Voltage Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V, TC < 163oC) 80 A Continuous (VGS = 5V, TC < 162oC) 80 A Continuous (VGS = 10V, TC = 25oC, with RTJA = 43oC/W) 31 A Figure 4 A Single Pulse Avalanche Energy (Note 1) 947 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC ID Parameter Pulsed EAS PD TJ, TSTG Operating and Storage Temperature Thermal Characteristics RTJC Thermal Resistance Junction to Case 0.59 o C/W C/W RTJA Thermal Resistance Junction to Ambient (Note 2) 62 o RTJA Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 43 oC/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 30 - - - V - 1 - - 250 - r100 nA V Off Characteristics Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = r20V - VDS = VGS, ID = 250PA 1 1.7 3 ID = 80A, VGS = 10V - 1.6 2.3 BVDSS TJ = 150°C PA On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 80A, VGS = 5V - 1.9 2.6 ID = 80A, VGS = 4.5V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 2.5 3.6 VDS = 15V, VGS = 0V, f = 1MHz - 9460 12585 pF - 1710 2275 pF pF m: Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 1050 1575 RG Gate Resistance f = 1MHz - 1.8 - : Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 165 214 nC - 89 115 nC - 9.1 12 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qg(TH) Threshold Gate Charge VGS = 0V to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDB8860_F085 Rev A 2 VDD = 15V ID = 80A Ig = 1.0mA - 26 - nC - 18 - nC - 33 - nC www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics t(on) Turn-On Time - - 340 td(on) Turn-On Delay Time - 14 - ns tr Turn-On Rise Time - 213 - ns td(off) Turn-Off Delay Time - 79 - ns tf Turn-Off Fall Time - 49 - ns toff Turn-Off Time - - 192 ns VDD = 15V, ID = 80A VGS = 5V, RGS = 1: Drain-Source Diode Characteristics ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V Reverse Recovery Time ISD = 80A, dISD/dt = 100A/Ps - - 43 ns Reverse Recovery Charge ISD = 80A, dISD/dt = 100A/Ps - - 29 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8860_F085 Rev A 3 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted POWER DISSIPATION MULIPLIER 1.2 300 VGS = 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 25 50 75 100 125 150 TC, CASE TEMPERATURE( oC) 175 NORMALIZED THERMAL IMPEDANCE ZTJA 1 VGS = 5V 75 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 CURRENT LIMITED BY PACKAGE 150 0 25 0.0 0 225 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJC x RTJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 10 -1 0 10 FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 3000 I(PK), PEAK CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 50 -5 10 -4 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 Figure 4. Peak Current Capability FDB8860_F085 Rev A 4 www.fairchildsemi.com 1000 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT(A) 10us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If Rz 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 10 CURRENT LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE(V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.1 60 Figure 5. Forward Bias Safe Operating Area 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 10000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 160 120 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 60 40 20 3.5 0.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m: 3.0 TJ = 175oC 2.5 1.5 3 TJ = 25oC 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8860_F085 Rev A 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 8. Saturation Characteristics PULSE DURATION = 80Ps DUTY CYCLE=0.5% MAX 2.0 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 0 4.0 3.5 VGS = 10V 80 Figure 7. Transfer Characteristics ID = 40A VGS = 3V VGS = 5V 0 1.0 VGS = 4V 100 FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.6 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( OC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com 1.10 VGS = VDS ID = 250PA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 ID = 1mA 1.05 1.0 1.00 0.8 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 0.90 -80 200 VGS, GATE TO SOURCE VOLTAGE(V) Ciss CAPACITANCE (pF) 10000 Coss 500 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 80 120 160 200 10 VDD = 15V 8 6 4 2 ID = 80A ID = 1A 0 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage FDB8860_F085 Rev A 40 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20000 f = 1MHz VGS = 0V 0 TJ, JUNCTION TEMPERATURE( oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 -40 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ Motion-SPM¥ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ SPM® STEALTH¥ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS¥ SyncFET¥ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 © Fairchild Semiconductor Corporation www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.