FAIRCHILD FDD8647L

FDD8647L
N-Channel PowerTrench® MOSFET
40 V, 42 A, 9 mΩ
Features
General Description
„ Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
„ 100% UIL tested
Applications
„ Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A
„ RoHS Compliant
„ Inverter
„ Power Supplies
D
D
G
G
S
D
-PA
K
TO
-2 52
(TO -252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
42
52
(Note 1a)
-Pulsed
14
A
100
Single Pulse Avalanche Energy
EAS
Ratings
40
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
33
43
(Note 1a)
Operating and Storage Junction Temperature Range
3.1
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2.9
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD8647L
Device
FDD8647L
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Package
D-PAK (TO-252)
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
December 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
40
V
31
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.0
2.0
-6
mV/°C
VGS = 10 V, ID = 13 A
7.1
9.0
VGS = 4.5 V, ID = 11 A
9.9
13.0
VGS = 10 V, ID = 13 A, TJ = 125 °C
10.7
13.6
VDS = 5 V, ID = 13 A
49
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20 V, VGS = 0 V,
f = 1 MHz
1230
1640
pF
340
455
pF
55
80
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
8
16
3
10
ns
ns
19
34
ns
VDD = 20 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
2
10
ns
Total Gate Charge
VGS = 0 V to 10 V
20
28
nC
Qg
Total Gate Charge
14
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 20 V,
ID = 13 A
10
Qgs
3.8
nC
Qgd
Gate to Drain “Miller” Charge
3.1
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.6 A
(Note 2)
0.75
1.2
VGS = 0 V, IS = 13 A
(Note 2)
0.84
1.3
IF = 13 A, di/dt = 100 A/µs
V
28
45
ns
15
27
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V.
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
2
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
100
3.5
VGS = 4.5 V
80
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 5 V
VGS = 10 V
60
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
20
VGS = 3.5 V
0
0.0
0.5
1.0
1.5
2.0
VGS = 4 V
2.5
VGS = 4.5 V
2.0
1.5
VGS = 5 V
1.0
VGS = 10 V
0.5
2.5
0
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
80
100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
ID = 13 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
1.8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
ID = 13 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
20
TJ = 125 oC
10
TJ = 25 oC
0
-50
-25
0
25
50
75
2
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
3.0
VDS = 5 V
60
40
TJ = 150
oC
20
TJ = 25 oC
TJ = -55 oC
2
3
4
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
0
1
VGS = 0 V
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
3
1.2
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
3000
ID = 13 A
1000
8
VDD = 20 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 15 V
VDD = 25 V
4
Ciss
Coss
100
2
Crss
f = 1 MHz
VGS = 0 V
10
0.1
0
0
5
10
15
20
Figure 7. Gate Charge Characteristics
40
60
ID, DRAIN CURRENT (A)
42
10
TJ = 25 oC
TJ = 125 oC
50
40
VGS = 10 V
30
Limited by Package
20
VGS = 4.5 V
10
o
RθJC = 2.9 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
5
10
10
P(PK), PEAK TRANSIENT POWER (W)
200
100
100 us
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
o
RθJC = 2.9 C/W
100 ms
DC
TC = 25 oC
0.1
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
100
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
10
100 200
4
10
SINGLE PULSE
RθJC = 2.9 oC/W
3
10
TC = 25 oC
2
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC = 2.9 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 96 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
5
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
6
www.fairchildsemi.com
FDD8647L N-Channel PowerTrench® MOSFET
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