N-Channel PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Applications Fast switching speed DC - DC Conversion 100% UIL tested Inverter RoHS Compliant Synchronous Rectifier D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 35 (Note 1a) -Pulsed 8 A 40 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 84 54 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.3 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86102LZ Device FDD86102LZ ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET August 2012 FDD86102LZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3.0 V 100 V 69 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.5 -6 mV/°C VGS = 10 V, ID = 8 A 17.8 VGS = 4.5 V, ID = 7 A 23.2 31 VGS = 10 V, ID = 8 A, TJ = 125 °C 31.1 40 VDS = 5 V, ID = 8 A 22.5 31 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 1157 1540 pF 181 245 pF 7.7 15 pF Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge 6.6 14 ns 2.3 10 ns 20 32 ns 2.3 10 ns VGS = 0 V to 10 V 18 26 nC VGS = 0 V to 4.5 V VDD = 50 V, ID = 8 A 8.7 13 VDD = 50 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω nC 2.7 nC 2.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.82 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.75 1.2 IF = 8 A, di/dt = 100 A/μs V 43 70 ns 43 70 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 96 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V. 4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 2 www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 4.5 V VGS = 3.5 V 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 3 V 20 VGS = 2.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 2.5 V 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 40 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 120 ID = 8 A VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 8 A 90 60 TJ = 125 oC 30 TJ = 25 oC 0 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 50 IS, REVERSE DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 0 1 2 3 4 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 0.001 0.0 5 VGS = 0 V TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 3 1.2 www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 VDD = 25 V ID = 8 A 1000 Ciss 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 100 10 0 0 5 10 15 1 0.1 20 1 Figure 7. Gate Charge Characteristics -1 10 TJ Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 40 = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 10 -2 -3 10 -4 10 TJ = 125 oC -5 10 TJ = 25 oC -6 10 -7 10 -8 10 -9 10 30 VGS = 0 V 10 0 5 10 15 20 25 30 35 VGS, GATE TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 40 ID, DRAIN CURRENT (A) 100 30 VGS = 10 V 20 VGS = 4.5 V 10 10 100us THIS AREA IS LIMITED BY rDS(on) 1 50 0.1 75 100 125 0.05 150 o TC, CASE TEMPERATURE ( C) 0.1 1 RθJC = 2.3 oC/W 10 ms TC = 25 oC DC 10 100 300 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Case Temperature ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 1 ms SINGLE PULSE TJ = MAX RATED o RθJC = 2.3 C/W 0 25 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 2 Figure 12. Forward BiasSafe Operating Area 4 www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 10000 1000 100 SINGLE PULSE o RθJC = 2.3 C/W o TC = 25 C 10 -5 10 -4 -3 10 -2 10 -1 10 10 1 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 2.3 C/W 0.01 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 5 www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDD86102LZ Rev.C1 6 www.fairchildsemi.com FDD86102LZ N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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