FAIRCHILD FDD86110

FDD86110
N-Channel PowerTrench® MOSFET
100 V, 50 A, 10.2 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
„ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
„ 100% UIL tested
„ RoHS Compliant
Application
„ DC - DC Conversion
D
D
G
G
S
D
-P-2A52
K
TO
(T O -252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
50
80
(Note 1a)
12.5
(Note 3)
135
-Pulsed
A
60
Single Pulse Avalanche Energy
EAS
Ratings
100
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
127
(Note 1a)
Operating and Storage Junction Temperature Range
3.1
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
0.98
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD86110
Device
FDD86110
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
Package
D-PAK(TO-252)
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
October 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
72
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2
2.8
-10
mV/°C
VGS = 10 V, ID = 12.5 A
8.5
VGS = 6 V, ID = 9.8 A
11.3
16
VGS = 10 V, ID = 12.5 A,TJ = 125°C
15
18
VDS = 10 V, ID = 12.5 A
38
10.2
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1MHz
1702
2265
pF
379
505
pF
17
30
pF
Ω
0.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 12.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VDD = 50 V,
ID = 12.5 A
12
20
5.4
10
ns
ns
19
35
ns
3.9
10
ns
25
35
nC
7.1
nC
5.2
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.5 A
(Note 2)
0.80
1.3
VGS = 0 V, IS = 2.6 A
(Note 2)
0.72
1.2
IF = 12.5 A, di/dt = 100 A/μs
V
52
83
ns
60
96
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 90 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
2
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
ID, DRAIN CURRENT (A)
VGS = 6 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 5.5 V
45
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
30
VGS = 5 V
15
VGS = 4.5 V
0
0
1
2
3
4
5
VGS = 4.5 V
4
VGS = 5 V
3
VGS = 5.5 V
2
VGS = 6 V
1
0
0
15
30
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
50
ID = 12.5 A
VGS = 10 V
ID = 12.5 A
30
TJ = 125 oC
20
10
TJ = 25 oC
0
4
100 125 150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A)
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
45
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
45
VDS = 5 V
30
TJ = 150 oC
TJ = 25 oC
15
TJ = -55 oC
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2
3
4
5
6
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.001
0.0
7
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
3
1.2
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 12.5 A
VDD = 50 V
8
VDD = 25 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
6
4
Ciss
1000
Coss
100
2
0
f = 1 MHz
VGS = 0 V
0
5
10
15
20
25
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
80
ID, DRAIN CURRENT (A)
100
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
60
VGS = 10 V
40
Limited by Package
VGS = 6 V
20
o
RθJC = 0.98 C/W
1
0.001
0.1
1
10
0
25
100
50
125
150
Figure 10. Maximum Continous Drain Current
vs. Case Temperature
80
P(PK), PEAK TRANSIENT POWER (W)
10000
100 μs
10
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
0.5
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
IAS, AVALANCHE CURRENT (A)
Crss
10
0.1
1 ms
RθJC = 0.98 oC/W
10 ms
DC
TC = 25 oC
1
10
100
400
TC = 25 oC
1000
100
50 -5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
SINGLE PULSE
RθJC = 0.98 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
RθJC = 0.98 C/W
0.01
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
5
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I58
©2011 Fairchild Semiconductor Corporation
FDD86110 Rev.C
6
www.fairchildsemi.com
FDD86110 N-Channel PowerTrench® MOSFET
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