FDD86540 N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS Compliant Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch D D G S G D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 50 136 (Note 1a) -Pulsed 21.5 A 120 Single Pulse Avalanche Energy EAS Ratings 60 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 228 127 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.98 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86540 Device FDD86540 ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET February 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 60 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.1 -11 mV/°C VGS = 10 V, ID = 21.5 A 3.4 VGS = 8 V, ID = 19.5 A 4.1 5 VGS = 10 V, ID = 21.5 A, TJ = 125 °C 5.2 6.3 VDS = 10 V, ID = 21.5 A 75 VDS = 30 V, VGS = 0 V, f = 1 MHz 4767 6340 pF 1409 1880 pF 48 90 pF 4.1 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 8 V VDD = 30 V, ID = 21.5 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 21.5 A 26 42 15 28 ns ns 31 49 ns 6.9 14 ns 65 90 nC 54 75 nC 23 nC 12 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 21.5 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 V IF = 21.5 A, di/dt = 100 A/μs 56 90 ns 43 69 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. b) 96 °C/W when mounted on a minimum pad a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C 2 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 8 VGS = 10 V VGS = 6 V VGS = 8 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 90 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 VGS = 5.5 V 30 VGS = 5 V 0 0 1 2 3 4 5 6 VGS = 5.5 V 4 VGS = 6 V 2 VGS = 8 V VGS = 10 V 0 0 30 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 20 ID = 21.5 A VGS = 10 V 1.6 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 60 TJ = 150 oC TJ = 25 oC 30 TJ = -55 oC 5 6 5 TJ = 25 oC 200 100 5 6 7 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C TJ = 125 oC Figure 4. On-Resistance vs Gate to Source Voltage 90 4 10 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 4 120 2 ID = 21.5 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.7 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Ciss VDD = 20 V ID = 21.5 A 8 VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 6 VDD = 40 V 4 Coss 1000 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 50 60 10 0.1 70 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 140 100 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 0.98 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.1 1 10 120 VGS = 10 V 100 VGS = 8 V 80 60 40 Limited by Package 20 0 25 100 300 50 150 10000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 10 100 μs THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms DC RθJC = 0.98 oC/W TC = 25 oC 0.1 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 10 100 200 TC = 25 oC 1000 100 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C SINGLE PULSE RθJC = 0.98 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 0.98 C/W 0.01 -6 10 -5 10 -4 -3 10 10 -2 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C 5 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C 6 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® AccuPower™ FRFET® PowerXS™ AX-CAP™* Global Power ResourceSM Programmable Active Droop™ BitSiC® Green Bridge™ QFET® TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® SMART START™ EcoSPARK® MegaBuck™ TriFault Detect™ Solutions for Your Success™ EfficentMax™ MICROCOUPLER™ TRUECURRENT®* SPM® ESBC™ MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™