VS-10MQ040-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition SMA • Small foot print, surface mountable • High frequency operation PRODUCT SUMMARY • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Package SMA IF(AV) 1A VR 40 V VF at IF 0.49 V IRM 26 mA at 125 °C • Compliant to RoHS Directive 2002/95/EC DESCRIPTION TJ max. 150 °C Diode variation Single die EAS 3.0 mJ The VS-10MQ040-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 1 A DC VRRM IFSM tp = 5 μs sine VF 1.5 Apk, TJ = 125 °C TJ Range 40 V 120 A 0.56 V - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-10MQ040-M3 UNITS 40 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 123 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 50 % duty cycle at TL = 132 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 Following any rated load condition and with rated VRRM applied UNITS A Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current Revision: 22-Aug-11 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse 120 A 30 Document Number: 93358 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ040-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 1.5 A 1A TJ = 125 °C 1.5 A Maximum reverse leakage current See fig. 2 Threshold voltage IRM VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.54 0.62 V 0.49 0.56 0.5 mA 26 0.36 V 104 m 38 pF 2.0 nH 10 000 V/μs VALUES UNITS - 55 to 150 °C 80 °C/W Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device Case style SMA (similar D-64) 0.07 g 0.002 oz. 1F Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 22-Aug-11 Document Number: 93358 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ040-M3 www.vishay.com Vishay Semiconductors 1 0.1 0.2 IR - Reverse Current (mA) Allowable Case Temperature (°C) TJ = 150 °C TJ = 125 °C TJ = 25 °C 150 140 DC 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 90 Square wave (D = 0.50) 80 % rated VR applied 80 See note (1) 70 0.4 0.6 1.0 0.8 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.4 2.0 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 100 1.4 10 1.2 Average Power Loss (W) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit 0.8 DC 0.6 0.4 0.2 0 0.0001 5 10 15 20 25 30 35 40 0.4 0.8 1.2 1.6 2.0 2.4 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 0 5 10 15 20 25 30 35 40 IFSM - Non-Repetitive Surge Current (A) 0 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 22-Aug-11 Document Number: 93358 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ040-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 M Q 040 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product suffix 2 - Current rating 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (040 = 40 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-10MQ040-M3/5AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 22-Aug-11 Document Number: 93358 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1