STMICROELECTRONICS SO2369

BSV52
SO2369/SO2369A
SMALL SIGNAL NPN TRANSISTORS
■
■
■
Type
Marking
BSV52
B2
SO2369
N11
SO 2369A
N81
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
LOW CURRENT, FAST SWITCHING
APPLICATIONS.
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
SO2369/A
BSV52
V CES
Collector-Emitter Voltage (V BE = 0)
40
20
V
V
V CBO
Collector-Base Voltage (IE = 0)
40
20
V CEO
Collector-Emitter Voltage (I B = 0)
15
12
V
V EBO
Emitter-Base Voltage (I C = 0)
4.5
5
V
I CM
Collector Peak Current
P t ot
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
March 1996
o
Max. O perating Junction Temperature
0.2
A
200
mW
-65 to 150
o
C
150
o
C
1/5
BSV52/SO2369/SO2369A
THERMAL DATA
R t hj-amb •
R th j-SR •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
o
620
400
o
C/W
C/W
• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
I CES
Parameter
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (V BE = 0)
Test Cond ition s
Min.
V CB = 20 V
for SO2369/SO 2369A
V CB = 10 V
for BSV52
o
T j = 150 C
V CB = 10 V
for BSV52
V CB = 20 V
for SO2369A
Typ .
Max.
Un it
400
nA
100
nA
5
µA
400
nA
V (BR)CES ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 µA
for SO2369/SO 2369A
for BSV52
40
20
V
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
for SO2369/SO 2369A
for BSV52
15
12
V
V
V ( BR)CBO ∗ Collector-Base
Breakdown Voltage
(I B = 0)
I C = 10 µA
for SO2369/SO 2369A
for BSV52
40
20
V
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µA
for SO2369/SO 2369A
for BSV52
4.5
5
V
V
Collector-Emitter
Saturation Voltage
I C = 10 mA
IB = 0.3 mA
for BSV52
IB = 1 mA
I C = 10 mA
for SO2369A
for BSV52
IB = 3 mA
I C = 30 mA
for SO2369 BSV52
IB = 5 mA
I C = 50 mA
for BSV52
I C = 100 mA I B = 10 mA
for SO2369A
V CE(sat )∗
V BE(s at)∗
h FE∗
Collector-Base
Saturation Voltage
DC Current G ain
I C = 10 mA
IB
IB
I C = 30 mA
for SO2369A
IB
I C = 50 mA
for BSV52
I C = 100 mA I B
for SO2369A
IC
IC
IC
IC
IC
IC
IC
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/5
= 1 mA
= 3 mA
0.7
0.3
V
0.2
0.25
V
V
0.25
V
0.4
V
0.5
V
0.85
V
1.15
V
1.2
V
1.6
V
= 5 mA
= 10 mA
=1mA VCE =1V
=10mA VCE =0.35V
=10mA VCE =1V
=30mA VCE =0.4V
=50mA VCE =1V
=100mA V CE =1V
=100mA V CE =2V
for BSV52
for SO2369A
for All typ es
for SO2369A
for BSV52
for SO2369A
for SO2369
25
40
40
30
25
20
20
120
120
BSV52/SO2369/SO2369A
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
fT
Parameter
Transition F requency
Test Cond ition s
I C = 10 mA VCE = 10V f = 100MHz
for SO2369A
for BSV52/SO 2369
Min.
Typ .
Max.
500
400
Un it
MHz
MHz
C CB
Collector Base
Capacitance
IE = 0
V CE = 5 V
f = 1 MHz
4
pF
C EB
Emitter Base
Capacitance
IC = 0
V EB = 1 V
for BSV52
f = 1 MHz
4.5
pF
t on
Turn On T ime
I C = 10 mA
I B = 3 mA
12
ns
ts
Storage Time
I C = 10 mA
13
ns
t of f
Turn Off T ime
I C = 10 mA
IB1 = 3 mA
I B2 = -1.5 mA
18
ns
VBE = -0.5 V
I B1 = -IB2 = 10mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
3/5
BSV52/SO2369/SO2369A
SOT-23 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.85
1.1
33.4
43.3
B
0.65
0.95
25.6
37.4
C
1.20
1.4
47.2
55.1
D
2.80
3
110.2
118
E
0.95
1.05
37.4
41.3
F
1.9
2.05
74.8
80.7
G
2.1
2.5
82.6
98.4
H
0.38
0.48
14.9
18.8
L
0.3
0.6
11.8
23.6
M
0
0.1
0
3.9
N
0.3
0.65
11.8
25.6
O
0.09
0.17
3.5
6.7
0044616/B
4/5
BSV52/SO2369/SO2369A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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