BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS ■ ■ ■ Type Marking BSV52 B2 SO2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t SO2369/A BSV52 V CES Collector-Emitter Voltage (V BE = 0) 40 20 V V V CBO Collector-Base Voltage (IE = 0) 40 20 V CEO Collector-Emitter Voltage (I B = 0) 15 12 V V EBO Emitter-Base Voltage (I C = 0) 4.5 5 V I CM Collector Peak Current P t ot Total Dissipation at T c = 25 C T stg Storage Temperature Tj March 1996 o Max. O perating Junction Temperature 0.2 A 200 mW -65 to 150 o C 150 o C 1/5 BSV52/SO2369/SO2369A THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 620 400 o C/W C/W • Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CES Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Test Cond ition s Min. V CB = 20 V for SO2369/SO 2369A V CB = 10 V for BSV52 o T j = 150 C V CB = 10 V for BSV52 V CB = 20 V for SO2369A Typ . Max. Un it 400 nA 100 nA 5 µA 400 nA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 µA for SO2369/SO 2369A for BSV52 40 20 V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for SO2369/SO 2369A for BSV52 15 12 V V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) I C = 10 µA for SO2369/SO 2369A for BSV52 40 20 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA for SO2369/SO 2369A for BSV52 4.5 5 V V Collector-Emitter Saturation Voltage I C = 10 mA IB = 0.3 mA for BSV52 IB = 1 mA I C = 10 mA for SO2369A for BSV52 IB = 3 mA I C = 30 mA for SO2369 BSV52 IB = 5 mA I C = 50 mA for BSV52 I C = 100 mA I B = 10 mA for SO2369A V CE(sat )∗ V BE(s at)∗ h FE∗ Collector-Base Saturation Voltage DC Current G ain I C = 10 mA IB IB I C = 30 mA for SO2369A IB I C = 50 mA for BSV52 I C = 100 mA I B for SO2369A IC IC IC IC IC IC IC ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 = 1 mA = 3 mA 0.7 0.3 V 0.2 0.25 V V 0.25 V 0.4 V 0.5 V 0.85 V 1.15 V 1.2 V 1.6 V = 5 mA = 10 mA =1mA VCE =1V =10mA VCE =0.35V =10mA VCE =1V =30mA VCE =0.4V =50mA VCE =1V =100mA V CE =1V =100mA V CE =2V for BSV52 for SO2369A for All typ es for SO2369A for BSV52 for SO2369A for SO2369 25 40 40 30 25 20 20 120 120 BSV52/SO2369/SO2369A ELECTRICAL CHARACTERISTICS (Continued) Symb ol fT Parameter Transition F requency Test Cond ition s I C = 10 mA VCE = 10V f = 100MHz for SO2369A for BSV52/SO 2369 Min. Typ . Max. 500 400 Un it MHz MHz C CB Collector Base Capacitance IE = 0 V CE = 5 V f = 1 MHz 4 pF C EB Emitter Base Capacitance IC = 0 V EB = 1 V for BSV52 f = 1 MHz 4.5 pF t on Turn On T ime I C = 10 mA I B = 3 mA 12 ns ts Storage Time I C = 10 mA 13 ns t of f Turn Off T ime I C = 10 mA IB1 = 3 mA I B2 = -1.5 mA 18 ns VBE = -0.5 V I B1 = -IB2 = 10mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 BSV52/SO2369/SO2369A SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 4/5 BSV52/SO2369/SO2369A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5