2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) -60 V V CEO Collector-Emitter Voltage (I B = 0) -40 V V EBO Emitter-Base Voltage (I C = 0) -5 V -0.6 A 0.6 0.4 W W 3 1.8 W W IC P t ot T stg Tj Parameter Collector Current o Total Dissipation at T amb ≤ 25 C for 2N2905 for 2N2907 at T case ≤ 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/5 2N2905/2N2907 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max T O-39 TO -18 58.3 292 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Test Cond ition s Min. Typ . Max. Un it -20 -20 nA µA Collector Cut-off Current (IE = 0) V CB = -50 V V CB = -50 V I CEX Collector Cut-off Current (V BE = -0.5V) V CE = -30 V -50 nA I BEX Base Cut-off Current (V BE = -0.5V) V CE = -30 V -50 nA o Tc ase = 150 C V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA -60 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -40 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -0.4 -1.6 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -1.3 -2.6 V V DC Current G ain IC IC IC IC IC V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V hFE∗ fT -0.1 mA -1 mA -10 mA -150 mA -500 mA Transition F requency V CE = -20 V I C = -50 mA C EBO Emitter Base Capacitance IC = 0 V EB = -2 V f = 100 MHz C CBO Collector Base Capacitance IE = 0 V CB = -10 V td Delay Time V CC = -30 V I B1 = -15 mA tr Rise Time V CC = -30 V I B1 = -15 mA ts tf f = 1MHz 35 50 75 100 30 300 200 MHz 30 pF 8 pF I C = -150 mA 10 ns I C = -150 mA 40 ns Storage Time V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA 80 ns Fall T ime V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA 30 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 = = = = = f = 1MHz 2N2905/2N2907 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 3/5 2N2905/2N2907 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N2905/2N2907 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5