BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) Parameter 40 V V CES Collector-Emitter Voltage (V BE = 0) 40 V V CEO Collector-Emitter Voltage (I B = 0) 15 V V EBO Emitter-Base Voltage (I C = 0) 4.5 V IC Collector Current (t = 10 µs) o P t ot Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 0.5 A 0.36 1.2 W W -65 to 200 o C 200 o C 1/6 BSX20 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 146 486 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Max. Un it 0.4 30 µA µA T amb = 55 C 0.4 1 µA µA V CE = 15 V T amb = 55 o C 0.6 µA Base Cut-off Current (V BE = -3V) V CE = 15 V T amb = 55 C 0.6 µA Emitter Cut-off Current (I C = 0) V EB = 4.5 V 10 µA I CBO Collector Cut-off Current (IE = 0) V CB = 20 V V CB = 20 V I CES Collector Cut-off Current (V BE = 0) V CE = 15 V V CE = 40 V I CEX Collector Cut-off Current (V BE = -3V) I BEX I EBO Min. Typ . T amb = 150 o C o o V CER( sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 10Ω) I C = 10 mA 20 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 15 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 10 mA I C = 100 mA I C = 10 mA IB = 1 mA IB = 10 mA IB = 0.3 mA V BE(s at)∗ Base-Emitter Saturation Voltage I C = 10 mA I C = 100 mA IB = 1 mA IB = 10 mA 0.7 V BE(on) ∗ Base-Emitter O n Voltage I C = 30 µA V CE = 20 V o T amb = 100 C 350 hFE∗ DC Current G ain I C = 10 mA V CE = 1 V I C = 100 mA V CE = 2 V I C = 10 mA V CE = 1 V o T amb = -55 C 40 20 500 fT 0.85 1.5 V V mV 60 20 Transition F requency I C = 10 mA Collector Base Capacitance IE = 0 V CB = 5 V 4 pF C EBO Emitter Base Capacitance IC = 0 V EB = 1 V 4.5 pF t s∗∗ Storage Time V CC = 10 V I C = 10 mA I B1 = -IB2 = 10 mA 13 ns t on∗∗ Turn-on T ime V CC = 3 V I B1 = 3 mA V CC = 6 V I B1 = 40 mA I C = 10 mA 12 ns 7 ns V CC = 3 V I B1 = 3 mA V CC = 6 V I B1 = 40 mA I C = 10 mA I B2 = -1.5 mA I C = 100 mA IB2 = -20 mA 18 ns 21 ns Turn-off T ime ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See test circuit 2/6 V V V C CBO t off ∗∗ VCE = 10 V 0.25 0.6 0.3 600 6 MHz I C = 100 mA BSX20 Collector-emitter Saturation Voltage Base-emitter Saturation Voltage. DC Current Gain DC Current Gain Transition Frequency. 3/6 BSX20 Test circuit for tS. 4/6 BSX20 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 BSX20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6