STMICROELECTRONICS BSX20

BSX20
HIGH SPEED SATURATED SWITCHES
DESCRIPTION
The BSX20 is a silicon planar epitaxial NPN
transistors in Jedec TO-18 metal case. They are
primarily intended for veery high speed saturated
switching applications.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (IE = 0)
Parameter
40
V
V CES
Collector-Emitter Voltage (V BE = 0)
40
V
V CEO
Collector-Emitter Voltage (I B = 0)
15
V
V EBO
Emitter-Base Voltage (I C = 0)
4.5
V
IC
Collector Current (t = 10 µs)
o
P t ot
Total Dissipation at T amb ≤ 25 C
o
at T case ≤ 25 C
T stg
St orage Temperature
Tj
Max. Operating Junction Temperature
November 1997
0.5
A
0.36
1.2
W
W
-65 to 200
o
C
200
o
C
1/6
BSX20
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
146
486
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Max.
Un it
0.4
30
µA
µA
T amb = 55 C
0.4
1
µA
µA
V CE = 15 V
T amb = 55 o C
0.6
µA
Base Cut-off Current
(V BE = -3V)
V CE = 15 V
T amb = 55 C
0.6
µA
Emitter Cut-off Current
(I C = 0)
V EB = 4.5 V
10
µA
I CBO
Collector Cut-off
Current (IE = 0)
V CB = 20 V
V CB = 20 V
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 15 V
V CE = 40 V
I CEX
Collector Cut-off
Current (V BE = -3V)
I BEX
I EBO
Min.
Typ .
T amb = 150 o C
o
o
V CER( sus) ∗ Collector-Emitter
Sustaining Voltage
(R BE = 10Ω)
I C = 10 mA
20
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
15
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
I C = 10 mA
IB = 1 mA
IB = 10 mA
IB = 0.3 mA
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 1 mA
IB = 10 mA
0.7
V BE(on) ∗
Base-Emitter O n
Voltage
I C = 30 µA
V CE = 20 V
o
T amb = 100 C
350
hFE∗
DC Current G ain
I C = 10 mA
V CE = 1 V
I C = 100 mA V CE = 2 V
I C = 10 mA
V CE = 1 V
o
T amb = -55 C
40
20
500
fT
0.85
1.5
V
V
mV
60
20
Transition F requency
I C = 10 mA
Collector Base
Capacitance
IE = 0
V CB = 5 V
4
pF
C EBO
Emitter Base
Capacitance
IC = 0
V EB = 1 V
4.5
pF
t s∗∗
Storage Time
V CC = 10 V
I C = 10 mA
I B1 = -IB2 = 10 mA
13
ns
t on∗∗
Turn-on T ime
V CC = 3 V
I B1 = 3 mA
V CC = 6 V
I B1 = 40 mA
I C = 10 mA
12
ns
7
ns
V CC = 3 V
I B1 = 3 mA
V CC = 6 V
I B1 = 40 mA
I C = 10 mA
I B2 = -1.5 mA
I C = 100 mA
IB2 = -20 mA
18
ns
21
ns
Turn-off T ime
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit
2/6
V
V
V
C CBO
t off ∗∗
VCE = 10 V
0.25
0.6
0.3
600
6
MHz
I C = 100 mA
BSX20
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage.
DC Current Gain
DC Current Gain
Transition Frequency.
3/6
BSX20
Test circuit for tS.
4/6
BSX20
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
5/6
BSX20
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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