2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5320 Unit 2N5321 V CBO Collector-Base Voltage (I E = 0) 100 75 V V CEV Collector-Emitter Voltage (V BE = 1.5V) 100 75 V V CEO Collector-Emitter Voltage (I B = 0) 75 50 V V EBO Emitter-Base Voltage (I C = 0) 6 5 IC I CM IB Collector Current A Collector Peak Current 2 A Base Current 1 A o P tot Total Dissipation at T amb = 25 C P tot Total Dissipation at T c = 25 o C T stg , T j June 1997 V 1.2 Storage and Junction Temperature 1 W 10 W -65 to 200 o C 1/4 2N5320/2N5321 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 17.5 175 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 0.5 5 µA µA I CBO Collector Cut-off Current (I E = 0) V CB = 80 V V CB = 60 V for 2N5320 for 2N5321 I EBO Collector Cut-off Current (I C = 0) V EB = 5 V V EB = 4 V for 2N5320 for 2N5321 Collector-Emitter Breakdown Voltage (V BE = 1.5V) I C = 100 µA for 2N5320 for 2N5321 100 75 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for 2N5320 for 2N5321 75 50 V V Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA for 2N5320 for 2N5321 6 5 V V Collector-Emitter Saturation Voltage I C = 500 mA for 2N5320 for 2N5321 I B = 50 mA Base-Emitter Voltage I C = 500 mA for 2N5320 for 2N5321 V CE = 4 V V (BR)CEV V (BR)EBO V CE(sat) ∗ V BE ∗ h FE ∗ DC Current Gain for 2N5320 I C = 500 mA IC = 1 A for 2N5321 I C = 500 mA 2/4 0.5 0.8 V V 1.1 1.4 V V VCE = 4 V V CE = 2 V 30 10 130 V CE = 4 V 40 250 fT Transition Frequency I C = 50 mA t on Turn-on Time I C = 500 mA I B1 = 50 mA t off Turn-off Time I C = 500 mA V CC = 30 V I B1 = -IB2 = 50 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 % µA µA 0.1 0.5 V CE = 4 V V CC = 30 V f = 10 MHz 50 MHz 80 ns 800 ns 2N5320/2N5321 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N5320/2N5321 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4