ST1803DFH ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCED PERFORMANCE INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE DISTANCE PATH > 4 mm TO-220FH APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO Parameter Collector-Base Voltage (I E = 0) V CEO V EBO IC I CM IB Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current P tot V isol Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature T stg Tj December 2002 Value 1500 Unit V 600 7 10 15 4 V V A A A 40 2500 W V -65 to 150 150 o o C C 1/6 ST1803DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 3.125 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 700 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 4 A I B = 0.8 A I B = 1.2 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 4 A I B = 0.8 A DC Current Gain IC = 1 A I C = 4.5 A I C = 4.5 A V CE = 5 V V CE = 1 V V CE = 5 V h FE ∗ VF Diode Forward Voltage IF = 5 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4 A L B = 5 µH f = 16 KHz Min. Tj = 125 o C 130 2/6 Max. Unit 1 2 mA mA 400 mA 7 I Bon(END) = 0.8 A V BB = -2.5 V (see figure 1) ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Typ. Thermal Impedance V 3 10 15 5 5 5 1.5 V V 1.2 V 20 9 1.5 2 V 2.7 0.3 4 0.6 µs µs ST1803DFH Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST1803DFH Power losses Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 4/6 Switching Time Inductive Load ST1803DFH TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 L4 9.8 L5 0.409 0.630 30.6 1.126 10.6 0.385 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 5/6 ST1803DFH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6