STS1HNC60 N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET PRELIMINARY DATA TYPE STS1HNC60 ■ ■ ■ ■ ■ VDSS RDS(on) ID 600 V <8Ω 0.36 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SWITCH MODE LOW POWER SUPPIES (SMPS) ■ CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (●) PTOT Value Unit Drain-source Voltage (VGS = 0) Parameter 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V Drain Current (continuos) at TC = 25°C 0.36 A Drain Current (continuos) at TC = 100°C 0.22 A Drain Current (pulsed) 1.44 A Total Dissipation at TC = 25°C 2.5 W 0.028 W/°C 3.5 V/ns –65 to 150 °C 150 °C Derating Factor dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area July 2001 (1)ISD ≤ 0.36 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/6 STS1HNC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 35.7 60 °C/W °C/W °C 300 AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 0.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 100 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.3 A Min. Typ. Max. Unit 2 3 4 V 7 8 Ω Typ. Max. Unit DYNAMIC Symbol 2/6 Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Crss Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.3 A Min. 1.25 S 160 pF Output Capacitance 26 pF Reverse Transfer Capacitance 3.8 pF VDS = 25V, f = 1 MHz, VGS = 0 STS1HNC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300V, ID = 0.7 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 1.4 A, VGS = 10V, RG = 4.7Ω Typ. Max. Unit 8 ns 8 ns 8.5 11.5 nC 2.8 nC 2.8 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480 V, ID = 1.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. 25 Unit ns 9 ns 34 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 0.4 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 0.4 A 1.6 A 1.6 V 500 ns 950 µC 3.8 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STS1HNC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STS1HNC60 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 e3 3.81 0.050 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 5/6 STS1HNC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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