STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 ■ ■ VDSS RDS(on) ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 38 A ID Drain Current (continuos) at TC = 100°C 26 A Drain Current (pulsed) 152 A Total Dissipation at TC = 25°C 80 W 0.53 W/°C VDS VDGR VGS IDM (●) PTOT Parameter Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area 7 V/ns –65 to 175 °C 175 °C (1) I SD ≤38A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. Aug 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STB45NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 38 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 135 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 60 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA VGS = ±20V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 19 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.022 0.028 Ω 45 A DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID =19 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 24 S 1730 pF Ciss Input Capacitance Coss Output Capacitance 215 pF Crss Reverse Transfer Capacitance 63 pF STB45NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 30V, ID = 19A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID = 38A, VGS = 10V Typ. Max. Unit 20 ns 100 ns Qg Total Gate Charge Qgs Gate-Source Charge 9 nC Qgd Gate-Drain Charge 15 nC 43 58 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Conditions Min. VDD = 30V, ID = 19A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Fall Time Typ. Max. Unit 50 ns 20 ns Off-voltage Rise Time Vclamp =48V, ID =38A RG = 4.7Ω, VGS = 10V 45 ns tf Fall Time (see test circuit, Figure 5) 42 ns tc Cross-over Time 60 ns td(off) SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (1) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 38A, VGS = 0 trr Reverse Recovery Time ISD = 38A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM Max. Unit 38 A 152 A 1.5 V 95 ns Reverse Recovery Charge 260 nC Reverse Recovery Current 5.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STB45NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STB45NF06 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D A2 A C C2 DET AIL "A" DET AIL "A" A1 B2 E B G L2 L L3 P011P6/E 5/6 STB45NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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