STMICROELECTRONICS STB60NE03L-12

STB60NE03L-12
®
N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK
"SINGLE FEATURE SIZE " POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STB60NE03L-12
30 V
<0.012 Ω
60 A
■
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.009 Ω
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
D2PAK
TO-263
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTER
■ AUTOMOTIVE ENVIRONMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 20
V
60
A
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
IDM (•)
P tot
dv/dt
T stg
Tj
Drain Current (continuous) at T c = 100 C
42
A
Drain Current (pulsed)
240
A
Total Dissipation at T c = 25 o C
100
W
Derating Factor
0.67
W/ o C
7
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
-65 to 175
o
C
175
o
C
(1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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STB60NE3L1-16
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
1.5
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
60
A
150
mJ
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 15 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
30
VGS = 0
Unit
V
o
T c = 125 C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = VGS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V I D = 30 A
V GS = 5 V I D = 30 A
ID(on)
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.009
0.012
0.018
Ω
Ω
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
60
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =30 A
V GS = 0
Min.
Typ.
20
30
2200
570
200
Max.
Unit
S
2800
750
250
pF
pF
pF
STB60NE3L1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 15 V
R G =4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
Min.
I D = 30 A
V GS = 5 V
I D = 60 A
VGS = 5 V
Typ.
Max.
Unit
40
260
50
320
ns
ns
35
18
13
45
nC
nC
nC
Typ.
Max.
Unit
35
120
175
50
160
230
ns
ns
ns
Typ.
Max.
Unit
60
240
A
A
1.5
V
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 24 V I D = 60 A
R G =4.7 Ω V GS = 5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 60 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 60 A
V DD = 24 V
t rr
Q rr
I RRM
Min.
VGS = 0
di/dt = 100 A/µs
T j = 150 o C
55
ns
0.1
µC
3.5
Α
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STB60NE3L1-16
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
4/5
STB60NE3L1-16
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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