STMICROELECTRONICS STB90NF03L-1

STP90NF03L
STB90NF03L-1
N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
STP90NF03L
STB90NF03L-1
■
■
■
■
■
VDSS
RDS(on)
ID
30 V
30 V
< 0.0065 Ω
< 0.0065 Ω
90 A
90 A
TYPICAL RDS(on) = 0.0056 Ω
TYPICAL Qg = 35 nC @ 5V
OPTIMAL R DS(on) x Qg TRADE-OFF
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The resulting
transistor shows the best trade-off between on-resistance and gate charge. When used as high and
low side in buck regulators, it gives the best performance in terms of both conduction and switching
losses. This is extremely important for motherboards where fast switching and high efficiency are
of paramount importance.
3
1
TO-220
3
12
2
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
■
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP90NF03L
P90NF03L
TO-220
TUBE
STB90NF03L-1
B90NF03L
I2PAK
TUBE
April 2003
1/9
STP90NF03L/STB90NF03L-1
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
30
V
Drain-gate Voltage (RGS = 20 kΩ)
30
V
Gate- source Voltage
±20
V
ID
Drain Current (continuous) at TC = 25°C
90
A
ID
Drain Current (continuous) at TC = 100°C
65
A
Drain Current (pulsed)
360
A
IDM ()
PTOT
Tstg
Tj
Total Dissipation at TC = 25°C
150
W
Derating Factor
0.73
W/°C
–65 to 175
°C
175
°C
Storage Temperature
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON /OFF
Symbol
Parameter
Test Conditions
Min.
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
90
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 45 A
VGS = 5V, ID = 45 A
V(BR)DSS
2/9
Typ.
Max.
30
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
±100
nA
A
2.5
V
0.0056
0.0065
Ω
0.007
0.012
Ω
STP90NF03L/STB90NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max,
ID = 45 A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
40
S
2700
pF
Ciss
Input Capacitance
Coss
Output Capacitance
860
pF
Crss
Reverse Transfer Capacitance
170
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
30
ns
Rise Time
VDD = 15V, ID = 45 A
RG = 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
200
ns
Qg
Total Gate Charge
VDD = 24V, ID = 90 A,VGS = 5V
35
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
18
nC
td(on)
tr
Turn-on Delay Time
47
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
VDD = 1 5V, ID = 45 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
Typ.
Max.
50
105
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
90
A
ISDM (2)
Source-drain Current (pulsed)
360
A
VSD (1)
Forward On Voltage
ISD = 90 A, VGS = 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 90 A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
ISD
trr
Qrr
IRRM
Parameter
Test Conditions
Min.
Typ.
80
90
2.5
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/9
STP90NF03L/STB90NF03L-1
Safe Operating Area
Output Characteristics
Transconductance
4/9
Thermal Impedence
Transfer Characteristics
Static Drain-source On Resistance
STP90NF03L/STB90NF03L-1
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP90NF03L/STB90NF03L-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP90NF03L/STB90NF03L-1
TO-220 MECHANICAL DATA
DIM.
A
mm.
MIN.
TYP
4.40
inch
MAX.
MIN.
4.60
0.173
TYP.
MAX.
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
7/9
STP90NF03L/STB90NF03L-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/9
STP90NF03L/STB90NF03L-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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