ETC STB70NF02LT4

STB70NF02L
N-CHANNEL 20V - 0.006 Ω - 70A D2PAK
LOW GATE CHARGE STripFET II POWER MOSFET
PRELIMINARY DATA
TYPE
STB70NF02L
■
■
■
■
■
VDSS
RDS(on)
ID
20 V
<0.009Ω
70 A
TYPICAL RDS(on) = 0.016 Ω
TYPICAL Qg = 36 nC @ 10 V
OPTIMAL RDS(on) x Qg TRADE-OFF
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
3
1
D2 PAK
TO-263
(Suffix “T4”)
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique ”Single Feature
Size ” strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
VGS
ID
ID
IDM(•)
Ptot
Tstg
Tj
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Value
Unit
20
V
20
V
± 18
V
70
A
50
A
Drain Current (pulsed)
280
A
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.67
W/°C
-65 to 175
°C
175
°C
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limit ed by safe operating area
March 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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STB70NF02L
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
°C/W
°C/W
°C
1.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18V
VGS = 0
Min.
Typ.
Max.
20
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
I D = 250 µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 5 V
I D = 35 A
ID = 18 A
Min.
Typ.
1
V
0.006
0.011
0.009
0.015
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/7
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS>ID(on)xRDS(on)max ID=35 A
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Min.
40
S
1500
900
200
pF
pF
pF
STB70NF02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
I D = 35 A
VGS = 4.5 V
R G = 4.7 Ω
(Resistive Load, Figure 3)
480
Qg
Qgs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =16 V ID =46 A VGS =10V
36
5
10
45
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 10 V
I D = 35 A
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
30
110
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 70 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 70 A
di/dt = 100A/µs
T j = 150°C
VDD = 15 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
60
100
2
Max.
Unit
70
280
A
A
1.2
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
3/7
STB70NF02L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STB70NF02L
D2PAK MECHANICAL DATA
DIM.
MIN.
mm.
TYP.
MAX.
MIN.
inch.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
B
0.03
0.7
0.23
0.93
0.001
0.028
0.009
0.037
B2
C
1.14
0.45
1.7
0.6
0.045
0.018
0.067
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
E
10
10.4
0.394
E1
G
8.5
4.88
5.28
8
0.315
0.409
0.334
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
M
1.4
2.4
1.75
3.2
0.055
0.094
0.069
0.126
R
V2
0°
4°
0°
0.4
0.016
4°
5/7
STB70NF02L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
6/7
inch
MIN.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB70NF02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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