STT5NF30L N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET™II POWER MOSFET TYPE VDSS RDS(on) ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4A TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC-DC CONVERTERS POWER MANAGEMENT IN PORTABLE/ DESKTOP PCs SYNCHRONOUS RECTIFICATION DC MOTOR CONTROL (DISK DRIVERS, etc) SOT23-6L INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STT5NF30L STFN SOT23-6L TAPE & REEL March 2003 1/8 STT5NF30L ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V ID Drain Current (continuous) at TC = 25°C 4 A ID Drain Current (continuous) at TC = 100°C 2.5 A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C 1.6 W Single Pulse Avalanche Energy 50 mJ 78 °C/W IDM () PTOT EAS (1) Gate- source Voltage (•)Pulse width limited by safe operating area (1) Starting Tj =25°C, Id = 2 A, VDD = 15V. THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Tl Max. Operating Junction Temperature - 55 to 150 °C Storage Temperature - 55 to 150 °C Tstg Max ON/OFF Symbol Test Conditions Min. Typ. Max. Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125°C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 16V ±100 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 2 A VGS = 5 V, ID = 2 A IGSS 30 Unit ID = 250 µA, VGS = 0 IDSS 2/8 Parameter Drain-source Breakdown Voltage V(BR)DSS V V 1 0.039 0.046 0.050 0.060 Ω Ω STT5NF30L ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Test Conditions Forward Transconductance VDS = 10 V , ID = 2 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 3 S 330 90 40 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V, ID = 2 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) 11 100 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24 V, ID = 4 A, VGS = 5 V 6.5 3.6 2 9 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-Off Delay Time Fall Time Test Conditions Min. VDD = 15 V, ID = 2 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 5) 25 22 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100 A/µs, VDD = 20 V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 35 25 14 Max. Unit 4 16 A A 1.2 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STT5NF30L Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Junction-PCB Transfer Characteristics Static Drain-source On Resistance STT5NF30L Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STT5NF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STT5NF30L SOT23-6L MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 7/8 STT5NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8