STS9NF3LL N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS9NF3LL 30 V <0.019 Ω 9A TYPICAL RDS(on) = 0.016 Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V ID Drain Current (continuos) at TC = 25°C 9 A ID Drain Current (continuos) at TC = 100°C 5.6 A Drain Current (pulsed) 36 A Total Dissipation at TC = 25°C 2.5 W IDM(•) Ptot Gate- source Voltage (•) Pulse width limited by safe operating area. November 2001 . 1/8 STS9NF3LL THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Max Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature 50 150 -55 to 150 °C/W °C °C (*) When mounted on FR-4 board with 0.5 in2 pad of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 4.5 A ID = 4.5 A Min. Typ. 1 V 0.016 0.019 0.019 0.022 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS=15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 4 A Min. 12.5 S 800 250 60 pF pF pF STS9NF3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time ID = 4.5 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15 V ID= 9 A VGS= 5 V Min. Typ. Max. 18 32 (see test circuit, Figure 2) Unit ns ns 12.5 3.2 4.5 17 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 4.5 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 21 11 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 9 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 9 A VDD = 15 V Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 23 17 1.5 Max. Unit 9 36 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS9NF3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS9NF3LL Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STS9NF3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS9NF3LL SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS9NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8