BUL38D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 3 TO-220 APPLICATIONS ■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (VBE = 0) 800 V V CEO Collector-Emitter Voltage (IB = 0) 450 V V EBO Emitter-Base Voltage (IC = 0) 9 V Collector Current 5 V IC I CM IB Collector Peak Current (tp <5 ms) Base Current I BM Base Peak Current (t p <5 ms) P t ot Total Dissipation at Tc = 25 C T stg Storage T emperature Tj June 2000 o Max. O perating Junction Temperature 10 A 2 A 4 A 80 W -65 to 150 o C 150 o C 1/6 BUL38D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junct ion-Case Thermal Resistance Junct ion-Ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO Parameter V CE = 800 V V CE = 800 V Collector Cut-off Current (I B = 0) V CE = 450 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO Test Cond ition s Collector Cut-off Current (V BE = 0) I C = 100 mA Min. Typ . T j = 125 o C L = 25 mH Max. Un it 100 500 µA µA 250 µA 450 V 9 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.75 A 0.5 0.7 1.1 V V V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 1 A IC = 2 A I B = 0.2 A I B = 0.4 A 1.1 1.2 V V DC Current Gain I C = 10 mA I C = 0.5 A IC = 2 A Group A Group B V CE = 5 V VCE = 5 V V CE = 5 V VCC = 150 V tp = 30 µs h F E∗ 10 60 13 22 23 32 1.0 2.2 0.8 µs µs 1.8 100 µs ns ts tf RESISTIVE LO AD Storage Time Fall Time I C = 2.5 A I B1 = -IB2 = 0.5 A ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 2 A V BE(of f) = -5 V V CL = 250 V I B1 = 0.4 A R BB = 0 Ω L = 200 µH 1 55 ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 2 A V BE(of f) = -5 V V CL = 250 V o T j = 125 C IB1 = 0.4 A R BB = 0 Ω L = 200 µH 1.3 100 Vf Diode F orward Voltage I C = 2 A µs ns 1.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/6 V BUL38D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/6 BUL38D Inductive Storage Time Inductive Fall Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL38D TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL38D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6