STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS(on) ID STD2NA50 500 V <4Ω 2.2 A ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") APPLICATIONS MEDIUM CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CONSUMER AND INDUSTRIAL LIGHTING ■ 3 3 2 1 IPAK TO-251 (Suffix "-1") 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 2.2 A ID Drain Current (continuous) at T c = 100 o C 1.4 A Drain Current (pulsed) 8.8 A I DM (•) P tot o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 45 W 0.36 W/ o C -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/6 STD2NA50 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 2.78 100 1 275 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 2.2 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) 25 mJ EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 1 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 1.4 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-Source Leakage Current (V DS = 0) Min. Typ. Max. 500 Unit V 250 1000 µA µA 100 mA Typ. Max. Unit 3 3.75 V 3.25 4 8 Ω Ω T c = 125 o C V GS = ± 30 V ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID V GS = 10 V V GS = 10 V = 250 µA I D = 1.1 A I D = 1.1 A Min. 2.25 T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 2.2 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 1.1 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 0.7 1.9 300 55 15 Max. Unit S 400 70 20 pF pF pF STD2NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 250 V R G = 4.7 Ω Test Conditions I D = 1.1 A V GS = 10 V 7 8 10 11 ns ns Turn-on Current Slope V DD = 400 V R G = 47 Ω I D = 2.2 A V GS = 10 V 350 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V V GS = 10 V 18 5.5 7 25 nC nC nC Typ. Max. Unit 7 7 14 10 10 20 ns ns ns Typ. Max. Unit 2.2 8.8 A A 1.6 V I D =2.2 A Min. A/µs SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 400 V R G = 4.7 Ω Min. I D = 2.2 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 2.2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.2 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 380 ns 4.4 µC 23 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STD2NA50 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 4/6 STD2NA50 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 5/6 STD2NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6