STMICROELECTRONICS STW16NA60

STW16NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STW16NA60
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
600 V
< 0.4 Ω
16 A
TYPICAL RDS(on) = 0.33 Ω
± 30V GATE TO SOURCE VOLTAGE
RANTING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
600
V
Drain- gate Voltage (R GS = 20 kΩ)
600
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
16
A
ID
Drain Current (continuous) at T c = 100 o C
10
A
Drain Current (pulsed)
64
A
250
W
2
W/ o C
I DM (•)
P tot
o
Total Dissipation at T c = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
January 1998
1/5
This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.
STW16NA60
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
o
0.5
30
0.1
300
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
16
A
1000
mJ
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 25 V)
EAR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
80
mJ
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
10
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
I GSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
600
VGS = 0
I DSS
Min.
Unit
V
T c = 100 o C
V GS = ± 30 V
25
250
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = VGS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
V GS = 10 V
ID = 8 A
ID = 8 A
ID(on)
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
0.33
0.4
0.8
Ω
Ω
T c = 100 o C
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
16
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 8 A
V GS = 0
Min.
Typ.
Max.
Unit
10
15
S
3700
450
140
pF
pF
pF
STW16NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt)on
Qg
Q gs
Q gd
Typ.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 300 V
ID = 8 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 3)
Test Conditions
25
21
30
25
ns
ns
Turn-on Current Slope
V DD = 480 V
I D = 16 A
V GS = 10 V
R G = 47 Ω
(see test circuit, figure 5)
240
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V
155
18
78
200
nC
nC
nC
Typ.
Max.
Unit
45
20
66
50
25
80
ns
ns
ns
Typ.
Max.
Unit
16
64
A
A
I D = 16 A
Min.
V GS = 10 V
A/µs
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 480 V
I D = 16 A
V GS = 10 V
R G = 4.7 Ω
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 16 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 16 A
di/dt = 100 A/µs
V DD = 100 V
T j = 150 o C
(see test circuit, figure 5)
VGS = 0
Min.
1.6
V
770
ns
17
µC
45
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STW16NA60
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
4/5
STW16NA60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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