STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU14NA50 ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 Max220TM DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR Parameter Value Unit Drain-source Voltage (V GS = 0) 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 o C 14 A ID o Drain Current (continuous) at T c = 100 C 8.8 A Drain Current (pulsed) 56 A V GS I DM (•) P tot T stg Tj o Total Dissipation at T c = 25 C 160 W Derating Factor 1.28 W/ o C Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1997 1/5 STU14NA50 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 0.78 62.5 0.5 300 C/W oC/W o C/W o C Max Value Unit 14 A 980 mJ Max Max Typ AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 39 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 8.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Min. Typ. Max. 500 VGS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Unit V T c = 100 o C V GS = ± 30 V 25 50 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance V GS = 10V I D = 7A V GS = 10V I D = 7A ID(on) Min. Typ. Max. Unit 2.25 3 3.75 V 0.31 0.36 0.72 Ω Ω T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 14 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 7 A V GS = 0 Min. Typ. 8.5 11 2750 380 105 Max. Unit S 3600 500 140 pF pF pF STU14NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt)on Qg Q gs Q gd Parameter Test Conditions Turn-on Time Rise Time V DD = 250 V R G = 4.7 Ω Turn-on Current Slope V DD = 400 V R G = 47 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V Min. ID = 7 A V GS = 10 V I D = 14 A Typ. Max. Unit 36 53 48 70 ns ns I D = 14 A V GS = 10 V 160 A/µs V GS = 10 V 115 16 53 150 nC nC nC Typ. Max. Unit 52 24 80 68 32 105 ns ns ns Typ. Max. Unit 14 56 A A 1.6 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 400 V R G = 4.7 Ω Min. I D = 14 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 14 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 14 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 650 ns 12.3 µC 38 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STU14NA50 Max220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 0.626 0.641 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 4/5 STU14NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5