STMICROELECTRONICS STN2N10L

STN2N10L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
ADVANCE DATA
TYPE
V DSS
R DS(on)
I D CONT
STN2N10L
100 V
< 0.5 Ω
2A
■
■
■
■
■
■
TYPICAL RDS(on) = 0.35 Ω
AVALANCHE RUGGED TECHNOLOGY
SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
AVAILABLE IN TAPE AND REEL ON
REQUEST
150 oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
2
1
2
3
SOT-223
APPLICATIONS
HARD DISK DRIVERS
■ SMALL MOTOR CURRENT SENSE
CIRCUITS
■ DC-DC CONVERTERS AND POWER
SUPPLIES
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 15
V
Gate-source Voltage
o
I D (*)
Drain Current (continuous) at T c = 25 C
I D (*)
Drain Current (continuous) at T c = 100 o C
I DM (•)
P tot
Drain Current (pulsed)
o
Total Dissipation at T c = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
2
A
1.3
A
8
A
2.7
W
0.022
W/ o C
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area (*) Limited by package
March 1996
1/5
STN2N10L
THERMAL DATA
R thj-pcb
R thj-amb
Tl
o
46
60
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
o
C/W
C/W
o
260
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR , V DD = 25 V)
EAR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
Max Value
Unit
2
A
20
mJ
5
mJ
1.3
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
VGS = 0
Min.
Typ.
Max.
100
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
I GSS
Gate-body Leakage
Current (V DS = 0)
Unit
V
250
1000
µA
µA
± 100
nA
Typ.
Max.
Unit
1.8
2.5
V
0.35
0.5
1
Ω
Ω
T c = 125 o C
V GS = ± 15 V
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = VGS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
ID = 1 A
ID = 1 A
ID(on)
V GS = 5 V
V GS = 5 V
Min.
1
T c = 100o C
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
2
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 1 A
V GS = 0 V
Min.
Typ.
1
2.5
340
65
20
Max.
Unit
S
450
100
30
pF
pF
pF
STN2N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Typ.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 50 V
R G = 4.7 Ω
Test Conditions
ID = 4 A
V GS = 5 V
Min.
6
20
10
30
ns
ns
Turn-on Current Slope
V DD = 80 V
R G = 4.7 Ω
ID = 8 A
V GS = 5 V
380
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
ID = 8 A
V GS = 5 V
A/µs
10
6
3
15
nC
nC
nC
Typ.
Max.
Unit
10
10
20
15
15
30
ns
ns
ns
Typ.
Max.
Unit
2
8
A
A
1.5
V
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 80 V
R G = 4.7 Ω
Min.
ID = 8 A
V GS = 5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 8 A
di/dt = 100 A/µs
o
V DD = 30 V
T j = 150 C
t rr
Q rr
I RRM
Min.
V GS = 0
90
ns
0.27
µC
6
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STN2N10L
SOT223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
4/5
P008B
STN2N10L
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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