STMICROELECTRONICS STD60NH03LT4

STD60NH03L
N-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAK
STripFET™ III POWER MOSFET
TYPE
STD60NH03L
■
■
■
■
■
■
■
■
VDSS
RDS(on)
ID
30 V
< 0.009 Ω
60 A
TYPICAL RDS(on) = 0.0075 Ω @ 10 V
TYPICAL RDS(on) = 0.009 Ω @ 5 V
RDS(ON) * Qg INDUSTRY’s BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
3
3
1
2
1
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The STD60NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
SALES TYPE
STD60NH03LT4
STD60NH03L-1
MARKING
D60NH03L
D60NH03L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM(1)
Ptot
EAS (2)
Tstg
Tj
October 2003
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
± 20
60
43
240
70
0.47
300
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
1/12
STD60NH03L
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb(#)
Maximum Lead Temperature For Soldering Purpose
Max
Max
Max
2.14
100
43
275
°C/W
°C/W
°C/W
°C
(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (4)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 5 V
ID = 30 A
ID = 30 A
Min.
Typ.
1
V
0.0075
0.009
0.009
0.017
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
Test Conditions
gfs (4)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 10V f = 1 MHz VGS = 0
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
RG
2/12
Parameter
ID = 18 A
Min.
25
S
2200
380
49
pF
pF
pF
1.5
Ω
STD60NH03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 30 A
VDD = 15 V
RG = 4.7 Ω
VGS = 5 V
(Resistive Load, Figure 3)
21
95
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15 V ID= 60 A VGS= 5 V
15.7
8.3
3.4
Third-quadrant Gate Charge
VDS< 0 V
Qgls (4)
VGS= 10 V
Max.
Unit
ns
ns
21
15
nC
nC
nC
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 30 A
VDD = 15 V
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 3)
Typ.
Max.
Unit
19
15
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
VSD
Forward On Voltage
ISD = 30 A
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 60 A
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
IRRM
(1) Pulse width limited by safe operating area
(2) Starting Tj = 25 oC, ID = 30A, VDD = 20V
Test Conditions
Min.
Typ.
VGS = 0
Max.
Unit
60
240
A
A
1.4
V
32
51
3.2
(3) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(4) Gate charge for synchronous operation . See Appendix
ns
nC
A
A
.
.
Safe Operating Area
Thermal Impedance
3/12
STD60NH03L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/12
STD60NH03L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
5/12
STD60NH03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12
STD60NH03L
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
0.017
0.023
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
7/12
STD60NH03L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
8/12
STD60NH03L
9/12
STD60NH03L
APPENDIX A
Buck Converter: Power Losses Estimation
SW1
SW2
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is er moved to allow for a safer working junction
temperature.
The low side (SW2) device requires:
•
•
•
•
•
Very low RDS(on) to reduce conduction losses
Small Qgls to reduce the gate charge losses
Small Coss to reduce losses due to output capacitance
Small Qrr to reduce losses on SW1 during its turn-on
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires:
•
Small Rg and Ls to allow higher gate current peak and to limit the voltage
feedback on the gate
•
Small Qg to have a faster commutation and to reduce gate charge losses
•
Low RDS(on) to reduce the conduction losses.
10/12
STD60NH03L
Pconduction
Pswitching
Low Side Switch (SW2)
R DS(on)SW1 * I 2L * d
R DS(on)SW2 * I 2L * (1 − d )
Vin * (Q gsth(SW1) + Q gd(SW1) ) * f *
IL
Ig
Zero Voltage Switching
Recovery
Not Applicable
Conduction
Not Applicable
Vf(SW2) * I L * t deadtime * f
Pgate(Q G )
Q g(SW1) * Vgg * f
Q gls(SW2) * Vgg * f
PQoss
Vin * Q oss(SW1) * f
Vin * Q oss(SW2) * f
2
2
Pdiode
Parameter
d
Qgsth
Qgls
Pconduction
Pswitching
Pdiode
Pgate
PQoss
1
High Side Switch (SW1)
1
Vin * Q rr(SW2) * f
Meaning
Duty-cycle
Post threshold gate charge
Third quadrant gate charge
On state losses
On-off transition losses
Conduction and reverse recovery diode losses
Gate drive losses
Output capacitance losses
Dissipated by SW1 during turn-on
11/12
STD60NH03L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
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12/12