STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS( on) ID STE26N50 500 V < 0.2 Ω 26 A 4 ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ■ ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 500 V Drain-Gate Voltage (RGS = 20 kΩ) 500 V ± 20 V 26 A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C ID o ID M(•) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 17 A Drain Current (pulsed) 104 A Total Dissipation at Tc = 25 o C 300 W Derating Factor 2.4 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (•) Pulse width limited by safe operating area July 1993 1/8 STE26N50 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.42 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 V I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 Unit V T c = 125 oC V GS = ± 20 V 200 1 µA mA ± 200 nA Max. Unit 4 V 0.2 Ω Max. Unit ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 1 mA R DS( on) Static Drain-source On Resistance ID = 13 A V GS = 10V Min. Typ. 2 DYNAMIC Symbol gfs (∗) C iss C oss C rss Parameter Test Conditions Forward Transconductance V DS = 15 V I D = 13 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. 12 S VG S = 0 V 6 1200 500 nF pF pF Max. Unit SWITCHING ON Symbol t d(on) tr (di/dt) on Qg 2/8 Parameter Test Conditions Min. Typ. Turn-on Time Rise Time V DD = 250 V I D = 13 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 1) 60 80 ns ns Turn-on Current Slope V DD = 400 V ID = 26 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) 450 A/µs Total Gate Charge V DD = 400 V V GS = 10 V 275 nC I D = 26 A STE26N50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. 63 25 85 V DD = 400 V I D = 26 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 26 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 26 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 3) t rr Q rr I RRM Min. Typ. VG S = 0 Max. Unit 26 104 A A 1.4 V 850 ns 23.5 µC 55 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE26N50 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/8 STE26N50 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/8 STE26N50 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE26N50 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 0041565 7/8 STE26N50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8