STGP20NB37LZ N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT PRELIMINARY DATA TYPE V CES V CE(s at) IC STGP20NB37LZ CLAMPED < 2.0 V 20 A ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS ■ AUTOMOTIVE IGNITION 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter V CES Collector-Emitter Voltage (V GS = 0) V ECR Reverse Battery Protection V GE Gate-Emitter Voltage Value Un it CLAMPED V 20 V CLAMPED V 40 A IC Collector Current (continuous) at Tc = 25 o C IC Collector Current (continuous) at Tc = 100 o C 30 A Collector Current (pulsed) 80 A I CM (•) E AS Single Pulse Energy Tc = 25 o C 700 mJ P tot T otal Dissipation at Tc = 25 o C 150 W 1 W /o C 4 KV Derating Factor E SD ESD (Human Body Model) T s tg Storage Temperature Tj Max. O perating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area April 2000 1/6 STGP20NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp o 1 62.5 0.2 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions BV (CES) Clamped Voltage I C =2mA I C =2mA I C =2mA BV (ECR) Emitter Collector Break-down Voltage I C = 75 mA BV GE Gate Emitter Break-down Voltage I G =± 2 mA I CES Collector cut-off Current (VGE = 0) V CE = 15 V V CE = 200 V IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 10 V RGE Gate Emitter Resistanc e V GE = 0 V GE = 0 V GE = 0 Min. Typ. Max. Unit T C = - 40 C T C = 25 o C o T C = 150 C 380 375 370 405 400 395 430 425 420 V V V 25 o C 20 28 12 14 o TC = V GE = 0 T C = 150 o C V GE = 0 T C = 150 oC V CE = 0 V 16 V 10 100 µA µA ± 300 ± 660 ± 1000 µA 10 15 30 KΩ Min. Typ. Max. Unit 1.2 1.0 0.6 1.4 2 V V V 1.1 1.0 1.35 1.25 1.8 1.7 2.0 2.0 V V V V Typ. Max. Unit ON (∗) Symbo l V GE(th) V CE(SAT ) Parameter Test Con ditions o Gate Threshold Voltage V CE = V GE IC = 250µA V CE = V GE IC = 250µA V CE = V GE IC = 250µA T C = - 40 C o T C = 25 C o T C = 150 C Collector-Emitt er Saturation Voltage V GE V GE V GE V GE T C = 25 o C T C= 150 o C T C = 25 o C T C= 150 o C = = = = 4.5 4.5 4.5 4.5 V V V V IC IC IC IC = = = = 10 10 20 20 A A A A DYNAMIC Symbo l gf s C i es C o es C res QG 2/6 Parameter Test Con ditions Forward Transconductance V CE = 25 V Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V Gate Charge V CE = 280 V Min. I C = 20 A f = 1 MHz IC = 20 A V GE = 0 V GE = 5 V 35 S 2300 165 28 pF pF pF 51 nC STGP20NB37LZ FUNCTIONAL CHARACTERISTICS Symbo l II U.I. S. Parameter Test Con ditions Latching Current V CLAMP = 250 V R GOF F = 1 KΩ Functional Test Open Secondary Coil R GOF F=1 KΩ L =3 mH R GOF F=1 KΩ L =3 mH Min. Typ. V GE = 4.5 V TC = 150 o C 80 T C = 25 o C TC = 150 o C 21.6 15 26 18 Min. Typ. Max. Unit A A A SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Test Con ditions Max. Unit Delay Time Rise Time V CC = 250 V V GE = 4.5 V I C = 20 A R G = 1 KΩ 2.3 0.6 µs µs Turn-on Current Slope V CC = 250 V R G = 1 KΩ I C = 20 A V GE = 4.5 V 550 A/µs Turn-on Switching Losses V CC =250V I C =20A R G =1 KΩ V GE =4.5V 8.8 9.2 mJ mJ T C = 25 o C TC = 150 o C SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tc t r (v off ) tf td (o ff ) E o ff(**) Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime Off Voltage Delay Time Turn-off Switching Loss I C = 20 A V GE = 4.5 V 4.8 2.6 2.0 11.5 11.8 µs µs µs µs mJ tc t r (v off ) tf td (o ff ) E o ff(**) Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime T C = 150 oC Off Voltage Delay Time Turn-off Switching Loss I C = 20 A V GE = 4.5 V 7.8 3.5 3.9 12.0 17.8 µs µs µs µs mJ (•) Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)Losses Include Also The Tail (jedec Standardization) 3/6 STGP20NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 4/6 STGP20NB37LZ TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/6 STGP20NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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