STMICROELECTRONICS STGP10NB37LZ

STGP10NB37LZ
N-CHANNEL CLAMPED 20A - TO-220
INTERNALLY CLAMPED PowerMesh™ IGBT
■
■
■
■
■
■
TYPE
VCES
VCE(sat)
IC
STGP10NB37LZ
CLAMPED
< 1.8 V
20 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
3
1
2
TO-220
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH ™ IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE
Gate-Emitter Voltage
IC
ICM
PTOT
Collector Current (continuos) at TC = 100°C
Unit
CLAMPED
V
18
V
CLAMPED
V
20
A
Collector Current (pulse width < 100µs)
60
A
Total Dissipation at TC = 25°C
125
W
Derating Factor
0.83
W/°C
4
KV
ESD
ESD (Human Body Model)
Tstg
Storage Temperature
Tj
Value
Max. Operating Junction Temperature
November 2000
–65 to 175
°C
175
°C
1/9
STGP10NB37LZ
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
Rthc-sink
Thermal Resistance Case-sink Typ
1.2
°C/W
62.5
°C/W
0.2
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
400
425
V
BV(CES)
Clamped Voltage
IC = 2 mA, VGE = 0,
Tj= - 40°C to 150°C
375
BV(ECR)
Emitter Collector Break-down
Voltage
IEC = 75 mA, VGE = 0,
Tj= - 40°C to 150°C
18
Gate Emitter Break-down
Voltage
IG = ± 2 mA
Tj= - 40°C to 150°C
12
Collector cut-off Current
(VGE = 0)
VCE = 15 V, VGE =0 ,Tj =150 °C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 10V , VCE = 0
RGE
Gate Emitter Resistance
BVGE
ICES
V
VCE =200 V, VGE=0 ,TC =150°C
16
V
10
µA
100
µA
± 700
µA
20
KΩ
ON (1)
Symbol
VGE(th)
VCE(SAT)
IC
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Collector Current
Test Conditions
VCE = VGE, IC = 250µA,
Tj= - 40°C to 150°C
Min.
Typ.
0.6
VGE =4.5V, IC = 10 A, Tj= 25°C
1.2
VGE =4.5V, IC = 10 A, Tc= -40°C
1.3
VGE = 4.5V, VCE = 9 V
Max.
Unit
2.4
V
1.8
V
V
20
A
DYNAMIC
Symbol
gfs
Forward Transconductance
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
Qg
2/9
Parameter
Gate Charge
Test Conditions
VCE = 15 V , IC =20 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 320V, IC = 10 A,
VGE = 5V
Min.
Typ.
Max.
Unit
18
S
1250
pF
103
pF
18
pF
28
nC
STGP10NB37LZ
FUNCTIONAL CHARACTERISTICS
Symbol
IL
U.I.S.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Latching Current
VClamp = 320 V, TC = 125 °C
RGOFF = 1KΩ , VGE = 5 V
L = 300µH
20
A
Unclamped Inductive
Switching Current
RGOFF = 1KΩ , L = 1.6 mH ,
Tc= 125°C, Vcc = 30V
15
A
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Rise Time
VCC = 320 V, IC = 10 A
RG = 1KΩ , VGE = 5 V
340
ns
Turn-on Current Slope
Turn-on Switching Losses
VCC= 320 V, IC = 10 A
RG=1KΩ, VGE = 5 V
17
180
A/µs
µJ
Turn-on Delay Time
520
ns
SWITCHING OFF
Symbol
tc
tr(Voff)
td(off)
tf
Eoff(**)
tc
tr(Voff)
td(off)
tf
Eoff(**)
Parameter
Cross-over Time
Off Voltage Rise Time
Test Conditions
Vclamp = 320 V, IC = 10 A,
RGE = 1K Ω , VGE = 5 V
Delay Time
Min.
Typ.
Max.
Unit
4
µs
2.2
µs
14.8
µs
Fall Time
1.5
µs
Turn-off Switching Loss
4.0
mJ
5.2
µs
2.8
µs
Cross-over Time
Off Voltage Rise Time
Vclamp = 320 V, IC = 10 A,
RGE = 1KΩ , VGE = 5 V
Tj = 125 °C
Delay Time
Fall Time
Turn-off Switching Loss
15.8
µs
2
µs
6.5
mJ
(●)Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail
Normalized Transient Thermal Impedance
3/9
STGP10NB37LZ
Output Characteristics
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Normalized Collector-Emitter On Voltage vs
Temperature
Normalized Collector-Emitter On Voltage vs
Gate-Emitter Voltage
4/9
STGP10NB37LZ
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Collector Current
Normalized Break-down Voltage vs Temp.
Clamping Voltage vs Gate Resistance
5/9
STGP10NB37LZ
Self Clamped Inductive Switching IMAX vs
Open Secondary Coil
6/9
STGP10NB37LZ
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
7/9
STGP10NB37LZ
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
8/9
L4
P011C
STGP10NB37LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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