STMICROELECTRONICS STN1NB80

STN1NB80

N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223
PowerMESH MOSFET
TYPE
ST N1NB80
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
< 20 Ω
0.2 A
TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Value
Un it
Drain-source Voltage (V GS = 0)
Parameter
800
V
Drain- gate Voltage (R GS = 20 kΩ)
800
V
± 30
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
0.2
A
ID
Drain Current (continuous) at Tc = 100 oC
0.12
A
0.8
A
I DM (•)
P tot
Drain Current (pulsed)
o
T otal Dissipation at Tc = 25 C
Derating Factor
dv/dt( 1 )
Ts tg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1999
2.9
W
0.02
W /o C
4
V/ns
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 0.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STN1NB80
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
43
60
0.7
260
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
0.2
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
T yp.
Max.
800
V GS = 0
I DSS
Min.
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS(on)
Static Drain-source O n V GS = 10V
Resistance
I D(o n)
V DS = V GS
Min.
T yp.
Max.
Unit
3
4
5
V
16
20
Ω
ID =0.2 A
0.2
On State Drain Current V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 0.2 A
V GS = 0
Min.
T yp.
Max.
Unit
0.1
0.4
S
140
22
2.5
pF
pF
pF
STN1NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t d(on)
tr
Turn-on delay Time
Rise Time
V DD = 400 V ID = 0.5 A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
8
10
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
10
5
3.6
14
nC
nC
nC
T yp.
Max.
Unit
I D =1.1 A V GS = 10 V
ns
ns
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
40
16
50
V DD = 640 V ID = 1.1 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 5)
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
T yp.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD =0.2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 1.1 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 5)
V GS = 0
Max.
Unit
0.2
0.8
A
A
1.6
V
460
ns
1150
µC
5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STN1NB80
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STN1NB80
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN1NB80
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STN1NB80
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
7/8
STN1NB80
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
8/8
http://www.st.com
.