STMICROELECTRONICS STW60NE10

STW60NE10

N - CHANNEL 100V - 0.016Ω - 60A TO-247
STripFET POWER MOSFET
TYPE
STW 60NE10
■
■
■
■
V DSS
R DS(on)
ID
100 V
<0.022 Ω
60 A
TYPICAL RDS(on) = 0.016 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Value
Un it
Drain-source Voltage (VGS = 0)
Parameter
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 20
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
60
A
ID
Drain Current (continuous) at Tc = 100 C
o
42
A
Drain Current (pulsed)
240
A
T otal Dissipation at Tc = 25 C
180
W
Derating Factor
1.2
W /o C
9
V/ns
I DM (•)
P tot
o
dv/dt ( 1) Peak Diode Recovery voltage slope
Ts tg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
-65 to 175
o
C
175
o
C
( 1) ISD ≤60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STW60NE10
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
0.83
30
0.1
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
60
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 35 V)
500
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
100
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
2
ID = 30 A
Typ.
3
4
V
0.016
0.022
Ω
60
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =18 A
V GS = 0
Min.
Typ.
Max.
Unit
30
S
5300
640
215
pF
pF
pF
STW60NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 50 V
I D = 30 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
28
100
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V ID = 60 A V GS = 10 V
142
27
59
185
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 50 V
I D = 30 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
160
45
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V clamp = 80 V
I D = 60 A
V GS = 10 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
40
45
85
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 60 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 60 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 50 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
60
240
A
A
1.5
V
170
ns
1.02
µC
12
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STW60NE10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STW60NE10
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW60NE10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STW60NE10
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
7/8
STW60NE10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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