STMICROELECTRONICS STD4NC50

STD4NC50

N - CHANNEL 500V - 1.3 Ω - 3.7 A TO-251
PowerMESH MOSFET
TYPE
ST D4NC50
■
■
■
■
■
V DSS
R DS(on)
ID
500 V
< 1.5 Ω
3.7 A
TYPICAL RDS(on) = 1.3 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
2
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
Parameter
Value
Un it
Drain-source Voltage (VGS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 o C
3.7
A
ID
o
Drain Current (continuous) at Tc = 100 C
2.3
A
Drain Current (pulsed)
14.8
A
V GS
I DM (•)
P tot
dv/dt( 1)
Ts tg
Tj
o
T otal Dissipation at Tc = 25 C
50
W
Derating Factor
0.4
W /o C
3
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1999
-65 to 150
o
C
150
o
C
( 1) ISD ≤3.7 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STD4NC50
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
2.5
100
1.5
275
C/W
oC/W
o
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3.7
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
500
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 1.9 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
2
Typ.
3
4
V
1.3
1.5
Ω
3.7
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 1.9 A
V GS = 0
Min.
Typ.
Max.
Unit
3
S
700
85
9
pF
pF
pF
STD4NC50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 250 V I D = 1.9 A
V GS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
Min.
Typ.
Max.
11.5
9
I D = 3.7 A VGS = 10 V
Unit
ns
ns
18
6
8
25
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
7
6
13
V DD = 400 V I D = 3.7 A
R G = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 3.7 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 3.7 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
3.7
14.8
A
A
1.6
V
380
ns
2.3
µC
12
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STD4NC50
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STD4NC50
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STD4NC50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STD4NC50
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
7/8
STD4NC50
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