STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ PWM MOTOR CONTROL ■ DC-DC & DC-AC CONVERTER ■ SYNCROUNOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V 80 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o I DM (•) P tot dV/dt(1 ) T stg Tj Drain Current (continuous) at T c = 100 C 60 A Drain Current (pulsed) 320 A Total Dissipation at T c = 25 o C 150 W Derating Factor 1 W/ o C Peak Diode Recovery voltage slope 5 V/ns Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area March 1996 1/5 STP80N06-10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit 60 A I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) 600 mJ EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 150 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 60 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VGS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 60 Unit V T c = 125 o C V GS = ± 20 V 250 1000 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID = 250 µA V GS = 10V I D = 40 A V GS = 10V I D = 40 A Min. 2 Typ. 3 4 V 0.0085 0.01 0.02 Ω Ω T c = 100o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 80 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 40 A V GS = 0 Min. Typ. Max. Unit 25 S 5900 900 230 pF pF pF STP80N06-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 30 V I D = 40 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Conditions 32 160 42 200 ns ns Turn-on Current Slope V DD = 48 V I D = 80 A R G =50 Ω V GS = 10 V (see test circuit, figure 5) 240 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V I D = 80 A Min. V GS = 10 V A/µs 230 30 60 280 nC nC nC Typ. Max. Unit 35 175 240 46 230 300 ns ns ns Typ. Max. Unit 80 320 A A 1.5 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V I D = 40 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 80 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C V R = 30 V (see test circuit, figure 5) 125 ns 0.6 µC 10 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX 3/5 STP80N06-10 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C STP80N06-10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5