STB45N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB45N10L ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE LOW LEAKAGE CURRENT APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 I2PAK TO-262 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ CONSUMER AND INDUSTRIAL LIGHTING ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS) 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 15 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 45 A ID Drain Current (continuous) at T c = 100 o C 32 A 180 A I DM (•) P tot Drain Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 150 W 1 W/ o C -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area March 1996 1/6 STB45N10L THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit 45 A I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) 400 mJ EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 100 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 32 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 100 Unit V T c = 125 o C V GS = ± 15 V 250 1000 µA µA ±100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance I D = 22.5 A ID = 22.5 A I D = 22.5 A I D = 22.5 A ID(on) V GS = V GS = V GS = V GS = 5V 5V 10 V 10 V Min. 1 Typ. 1.7 2.5 V 0.028 0.036 0.072 0.032 0.064 Ω Ω Ω Ω T c = 100 o C 0.024 T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 45 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 22.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 20 43 3700 600 170 Max. Unit S 4700 800 230 pF pF pF STB45N10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 50 V R G = 4.7 Ω Test Conditions I D = 22.5 A V GS = 5 V 25 100 35 140 ns ns Turn-on Current Slope V DD = 80 V R G = 47 Ω I D = 45 A V GS = 5 V 130 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V V GS = 5 V 70 15 35 100 nC nC nC Typ. Max. Unit 40 90 130 60 130 190 ns ns ns Typ. Max. Unit 45 180 A A 1.5 V I D = 45 A Min. A/µs SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V R G = 4.7 Ω Min. I D = 45 A V GS = 5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 45 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A V R = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 165 ns 0.1 µC 12 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STB45N10L TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 4/6 MAX. D L STB45N10L TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G 5/6 STB45N10L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6