FDS8958A tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. • Q1: • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2 DD2 5 DD1 Q2 4 6 7 G2 S2 G SO-8 Pin 1 SO-8 G1 S1 S 3 Q1 2 8 S 1 S Absolute Maximum Ratings Symbol RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D1 D N-Channel 7.0A, 30V TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Q1 - Continuous 30 (Note 1a) ±20 -5 (Note 1a) 20 2 1.6 -20 2 1.6 W 0.9 54 0.9 13 mJ Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) Thermal Resistance, Junction-to-Case A -55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient V V 30 EAS RθJC Units ±20 7 (Note 1c) RθJA Q2 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A FDS8958A 13” 12mm 2500 units 2007 Fairchild Semiconductor Corporation FDS8958A Rev F1(W) FDS8958A February 2007 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = -20 V, ∆BVDSS ∆TJ IDSS On Characteristics VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 All 30 -30 V 25 -23 All mV/°C 1 -1 100 µA -100 nA 3 -3 V nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C ID = 6 A VGS = 4.5 V, VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A ID =-5 A VDS = -5 V, Q1 Q2 Q1 Q2 Q1 Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 1 -1 Q2 Q1 Q2 Q1 Q2 1.9 -1.7 -4.5 4.5 19 27 24 28 42 40 42 57 65 52 78 80 20 -20 mV/°C mΩ A 25 10 S 575 528 145 132 65 70 2.1 6.0 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz RG Gate Resistance VGS = 15 mV, f = 1.0 MHz pF pF Ω FDS8958A Rev F1 (W) FDS8958A Electrical Characteristics Symbol (continued) Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 5 13 23 14 3 9 10.7 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 26 13 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.75 -0.88 19 19 9 6 1.3 -1.3 1.2 -1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when 2 mounted on a .02 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A Rev F1 (W) FDS8958A Electrical Characteristics FDS8958A Typical Characteristics: Q1 (N-Channel) VGS = 10.0V 2.2 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) 16 6.0V 4.5V 12 8 3.0V 4 1.8 1.4 0 4.5V 5.0 6.0V 10.0V 1 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.08 ID = 7A VGS = 10.0V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0 0.6 0 1.2 1 0.8 0.6 ID = 3.5A 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) VGS = 3.5V 12 TA = 125oC -55oC 8 25oC 4 0 10 TA = 125oC 1 0.1 25oC 0.01 -55oC 0.001 0.0001 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev F1 (W) FDS8958A Typical Characteristics: Q1 (N-Channel) 10 800 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A VDS = 10V f = 1MHz VGS = 0 V 20V 8 CAPACITANCE (pF) 600 15V 6 4 2 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 0 12 Figure 7. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 100 10 ID, DRAIN CURRENT (A) 10 IAS, AVALANCHE CURRENT (A) 100µs RDS(ON) LIMIT 1ms 10ms 1s 1 100ms 10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 o Tj=25 Tj=125 TA = 25 C 1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RθJ A = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Single Pulse Maximum Power Dissipation. FDS8958A Rev F1 (W) FDS8958A Typical Characteristics: Q2 (P-Channel) 2 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -5.0V V -4.5V V 20 -4.0V 10 -3.5V -3.0V 0 1.8 VGS=-4.0V 1.6 -4.5V 1.4 -5.0V -6.0V -7.0V 1.2 1 2 3 4 5 6 0 6 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 18 24 30 -ID, DRAIN CURRENT (A) Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = -5A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1 0.8 0 1.4 1.2 1 0.8 0.6 ID = -2.5A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC TA = -55oC 12 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -8.0V 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. 4.5 VGS =0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev F1 (W) FDS8958A Typical Characteristics: Q2 (P-Channel) 800 ID = -5A VDS = -5V -15V 6 4 2 600 Ciss 500 400 300 Coss 200 100 0 0 2 4 6 8 Crss 0 10 0 Qg, GATE CHARGE (nC) 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics. 100 10 IAS, AVALANCHE CURRENT (A) 100µs RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.1 1 10 Tj=25 Tj=125 1 0.01 100 0.1 1 10 tAV, TIME IN AVALANCHE (mS) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 20. Maximum Safe Operating Area. Figure 21. Unclamped Inductive Switching Capability Figure 50 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 700 -10V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 SINGLE PULSE R θJ A = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) Figure 22. Single Pulse Maximum Power Dissipation. FDS8958A Rev F1 (W) FDS8958A r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Typical Characteristics: Q2 (P-Channel) 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 135 /W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 t2 T J - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958A Rev F1 (W) The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDS8958A Rev F1 (W) FDS8958A TRADEMARKS