STMICROELECTRONICS STP6NB80

STP6NB80
STP6NB80FP
N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
ST P6NB80
ST P6NB80FP
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
800 V
< 1.9 Ω
< 1.9 Ω
5.7 A
5.7 A
TYPICAL RDS(on) = 1.6 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
1
3
2
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
ST P6NB80
V DS
V DGR
V GS
Drain-source Voltage (VGS = 0)
800
V
Drain- gate Voltage (R GS = 20 kΩ)
G ate-source Voltage
800
V
± 30
ID
Drain Current (continuous) at Tc = 25 o C
ID
Drain Current (continuous) at Tc = 100 o C
Drain Current (pulsed)
T otal Dissipation at Tc = 25 o C
Derating F actor
I DM (•)
P tot
dv/dt( 1)
Un it
STP6NB80F P
5.7
V
5.7(*)
A
3.6
2
A
22.8
22.8
A
125
40
W
1.0
0.32
W/ C
V/ns
Peak Diode Recovery voltage slope
4
4
V ISO
Insulation W ithstand Voltage (DC)

2000
Ts tg
Storage Temperature
Tj
Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
(*) Limited only maximum temperature allowed
September 1998
o
V
-65 to 150
o
C
150
o
C
( 1) ISD ≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
STP6NB80/FP
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
TO-220
TO220-FP
1.0
3.1
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead T emperature For Soldering Purpose
o
C/W
62.5
0.5
300
o
C/W
C/W
o
C
Max Value
Unit
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5.7
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, V DD = 50 V)
314
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Typ.
Max.
800
V GS = 0
I DSS
Min.
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 3 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
3
4
5
V
1.6
1.9
Ω
5.7
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
V GS = 0
Min.
Typ.
2.5
4.5
1250
145
16
Max.
Unit
S
1625
190
21
pF
pF
pF
STP6NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 400 V
R G = 4.7 Ω
Test Con ditions
ID = 3 A
V GS = 10 V
Min.
19
9
27
13
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
I D = 6 A V GS = 10 V
33
11
14
47
nC
nC
nC
Typ.
Max.
Unit
11
9
16
16
13
23
ns
ns
ns
Typ.
Max.
Unit
5.7
22.8
A
A
1.6
V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
V DD = 640V I D = 6 A
R G = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 6 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
t rr
Q rr
I RRM
Min.
V GS = 0
700
ns
5.8
µC
16.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STP6NB80/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/6
L4
P011C
STP6NB80/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
L4
5/6
STP6NB80/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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