STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V 800 V < 1.9 Ω < 1.9 Ω 5.7 A 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 3 2 2 1 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST P6NB80 V DS V DGR V GS Drain-source Voltage (VGS = 0) 800 V Drain- gate Voltage (R GS = 20 kΩ) G ate-source Voltage 800 V ± 30 ID Drain Current (continuous) at Tc = 25 o C ID Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor I DM (•) P tot dv/dt( 1) Un it STP6NB80F P 5.7 V 5.7(*) A 3.6 2 A 22.8 22.8 A 125 40 W 1.0 0.32 W/ C V/ns Peak Diode Recovery voltage slope 4 4 V ISO Insulation W ithstand Voltage (DC) 2000 Ts tg Storage Temperature Tj Max. Operating Junction T emperature (•) Pulse width limited by safe operating area (*) Limited only maximum temperature allowed September 1998 o V -65 to 150 o C 150 o C ( 1) ISD ≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/6 STP6NB80/FP THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case TO-220 TO220-FP 1.0 3.1 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maximum Lead T emperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 5.7 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, V DD = 50 V) 314 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Typ. Max. 800 V GS = 0 I DSS Min. Unit V T c = 125 oC V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 3 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 1.6 1.9 Ω 5.7 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/6 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A V GS = 0 Min. Typ. 2.5 4.5 1250 145 16 Max. Unit S 1625 190 21 pF pF pF STP6NB80/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 400 V R G = 4.7 Ω Test Con ditions ID = 3 A V GS = 10 V Min. 19 9 27 13 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V I D = 6 A V GS = 10 V 33 11 14 47 nC nC nC Typ. Max. Unit 11 9 16 16 13 23 ns ns ns Typ. Max. Unit 5.7 22.8 A A 1.6 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. V DD = 640V I D = 6 A R G = 4.7 Ω VGS = 10 V SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V t rr Q rr I RRM Min. V GS = 0 700 ns 5.8 µC 16.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP6NB80/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C STP6NB80/FP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 5/6 STP6NB80/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6