STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V 800 V < 1.50 Ω < 1.50 Ω 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 1 2 3 3 2 1 TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e STW 8NA80 V DS V DGR V GS Unit ST H8NA80FI 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V G ate-source Voltage ± 30 V Drain-source Voltage (V GS = 0) o ID Drain Current (continuous) at Tc = 25 C 7.2 4.5 A ID o Drain Current (continuous) at Tc = 100 C 4.5 2.8 A I DM (•) P tot V ISO T s tg Tj Drain Current (pulsed) 28.8 28.8 A T otal Dissipation at Tc = 25 oC 175 70 W Derating Factor 1.4 0.56 W/ oC Insulation W ithstand Voltage (DC) 4000 Storage T emperature Max. O perating Junct ion T emperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1998 1/6 STW8NA80 STH8NA80FI THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max TO-247 ISOWATT 218 0.71 1.78 30 0.1 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Parameter 7.2 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) 700 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA Gate-body Leakage Current (VDS = 0) Typ. Max. 800 V GS = 0 V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Min. Unit V T c = 100 oC V GS = ± 30 V 50 500 µA µA 100 nA ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 4A On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V I D(o n) Min. Typ. Max. Unit 2.25 3 3.75 V 1.3 1.5 Ω 7.2 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/6 Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz ID = 4 A V GS = 0 Min. Typ. 4.5 7.9 1750 188 50 Max. Unit S 2300 245 70 pF pF pF STW8NA80 STH8NA80FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Parameter V DD = 400 V R G = 4.7 Ω Turn-on Current Slope V DD = 640 V R G = 47 Ω (di/dt) on Qg Q gs Q gd Test Con ditions Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V Min. ID = 4 A V GS = 10 V Max. Unit 20 28 28 38 ns ns 170 ID = 8 A V GS = 10 V ID = 8 A Typ. V GS = 10 V A/µs 75 10 35 100 nC nC nC Typ. Max. Unit 18 20 25 25 28 35 ns ns ns Typ. Max. Unit 7.2 28.8 A A 1.6 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 640 V R G = 4.7 Ω Min. ID = 8 A V GS = 10 V SOURCE DRAIN DIODE Symbo l Parameter ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Con ditions I SD = 7.2 A I SD = 7.5 A V DD = 100 V Min. V GS = 0 di/dt = 100 A/µs T j = 150 oC 850 ns 17 µC 40 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STW8NA80 STH8NA80FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/6 STW8NA80 STH8NA80FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 5/6 STW8NA80 STH8NA80FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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