STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP30NE06 STP30NE06FP 60 V 60 V < 0.050 Ω < 0.050 Ω 30 A 17 A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 2 2 1 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP30NE06 V DS V DGR V GS Un it STP30NE06FP Drain-source Voltage (VGS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 30 17 A ID Drain Current (continuous) at Tc = 100 o C 21 12 A Drain Current (pulsed) 120 68 A T otal Dissipation at Tc = 25 o C 80 30 W 0.53 0.2 W /o C 2000 V I DM (•) P tot Derating Factor V ISO Insulation W ithstand Voltage (DC) dV/dt Peak Diode Recovery voltage slope Ts tg Tj Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area 7 V/ns -65 to 175 o C 175 o C ( 1) ISD ≤ 30 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX ’ January 1999 1/6 STP30NE06/FP THERMAL DATA R thj -case Thermal Resistance Junction-case R thj -amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose TO-220 TO-220FP 1.87 5 Max 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 30 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30 V) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA Typ. Max. 60 V GS = 0 V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) Min. Unit V o T c = 125 C V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 15 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.042 0.050 Ω 30 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/6 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =15 A V GS = 0 Min. Typ. 7 13 Max. Unit S 1450 200 45 pF pF pF STP30NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on Time Rise Time V DD = 30 V R G =4.7Ω Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V Min. I D = 30 A Typ. Max. 18 95 ID = 15 A V GS = 10 V V GS = 10 V Unit ns ns 35 10 13 50 nC nC nC Typ. Max. Unit SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. 10 41 60 V DD = 48 V I D = 30 A R G =4.7 Ω V GS = 10 V ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 30 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A V DD = 30 V t rr Q rr I RRM Min. Typ. V GS = 0 di/dt = 100 A/µs Tj = 150 o C Max. Unit 30 120 A A 1.5 V 85 ns 0.19 µC 4.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP30NE06/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C STP30NE06/FP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 5/6 STP30NE06/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6