STMICROELECTRONICS STB19NB20

STB19NB20

N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE
ST B19NB20
■
■
■
■
■
■
V DSS
200 V
R DS(on)
< 0.180 Ω
ID
19 A
TYPICAL RDS(on) = 0.150 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
V GS
ID
ID
I DM (•)
P tot
dv/dt( 1)
T s tg
Tj
Parameter
Drain-source Voltage (V GS = 0)
Drain- gate Voltage (R GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
o
Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
June 1998
Value
200
200
± 30
19
12
76
125
1
5.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
V/ns
o
C
o
C
( 1) ISD ≤ 19A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STB19NB20
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
1
o
C/W
62.5
0.5
300
o
C/W
C/W
o
C
Max Value
Unit
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
19
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
580
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (VDS = 0)
Min.
V GS = 0
Typ.
Max.
200
Unit
V
1
10
µA
µA
± 100
nA
Max.
Unit
4
5
V
0.150
0.180
Ω
o
T c = 125 C
V GS = ± 30 V
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 9.5 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
3
Typ.
19
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =9.5 A
V GS = 0
Min.
Typ.
Max.
3
Unit
S
1000
285
45
1350
385
60
pF
pF
pF
STB19NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 100 V I D = 9.5 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 3)
Test Con ditions
Min.
15
15
20
20
ns
ns
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 160 V
29
9.5
13
40
nC
nC
nC
Typ.
Max.
Unit
10
10
20
15
15
30
ns
ns
ns
Typ.
Max.
Unit
19
76
A
A
1.5
V
I D = 19 A V GS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
V DD = 160 V I D = 19 A
R G = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD =19 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD =19 A di/dt = 100 A/µs
o
Tj = 150 C
V DD = 50 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
210
ns
1.5
µC
14.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STB19NB20
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STB19NB20
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STB19NB20
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STB19NB20
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
C2
A2
A
C
DETAIL”A”
DETAIL ”A”
A1
B2
E
B
G
L2
L
L3
P011P6/E
7/8
STB19NB20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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