STPS20L25CT/CG ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM 25 V Tj (max) 150 °C VF (max) 0.35 V A1 K A2 FEATURES AND BENEFITS n n n K VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED A2 A1 K A2 A1 D2PAK STPS20L25CG TO-220AB STPS20L25CT DESCRIPTION Dual center tap Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB and D2PAK, this device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 25 V IF(RMS) RMS forward current 30 A 10 20 A 220 A IF(AV) Average forward current Tc = 145°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp=2 µs square F=1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM Repetitive peak avalanche power tp = 1µs 5300 W - 65 to + 150 °C 150 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed : 4A 1/5 STPS20L25CT/CG THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case Value Unit 1.5 °C/W Per diode Total Rth (c) 0.8 0.1 Coupling When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions Tests conditions IR * Reverse leakage current Tj = 25°C Min. Forward voltage drop Max. Unit 800 µA 125 250 mA 0.46 V 0.30 0.35 VR = VRRM Tj = 125°C VF * Typ. Tj = 25°C IF = 10 A Tj = 125°C IF = 10 A Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A 0.56 0.41 0.48 * tp = 380 µs, δ < 2% Pulse test: To evaluate the maximum conduction losses use the following equation : P = 0.22 x IF(AV) + 0.013 IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( δ = 0.5). PF(av)(W) IF(av)(A) 12 5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-c) 10 4 8 3 δ=1 6 2 Rth(j-a)=50°C/W 4 T T 1 2 IF(av) (A) 0 0 1 2 3 4 5 6 δ=tp/T 7 8 9 tp 10 0 11 Fig. 3: Normalized avalanche power derating versus pulse duration. δ=tp/T 0 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 Tamb(°C) tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/5 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS20L25CT/CG Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25°C 0.6 0.4 δ = 0.2 Tc=100°C t t(s) δ=0.5 1E-2 T δ = 0.1 0.2 tp(s) Single pulse 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 0.0 1.0E-4 1.0E-3 δ=tp/T 1.0E-2 1.0E-1 tp 1.0E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) IR(mA) 5E+2 δ = 0.5 Tc=75°C 5.0 Tj=150°C F=1MHz Tj=25°C 1E+2 Tj=125°C 1E+1 1.0 1E+0 Tj=25°C 1E-1 1E-2 VR(V) VR(V) 0 5 10 15 20 25 Fig. 9: Forward voltage drop versus forward current (maximum values). 100.0 0.1 1 2 5 10 20 50 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L25G only) Rth(j-a) (°C/W) IFM(A) 80 70 Typical values Tj=150°C 60 10.0 50 Tj=25°C 1.0 40 30 Tj=125°C 20 VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 0 S(Cu) (cm²) 0 4 8 12 16 20 24 28 32 36 40 3/5 STPS20L25CT/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 4/5 Millimeters Min. n Inches Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° COOLING METHOD: (METHOD C) Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° BY CONDUCTION STPS20L25CT/CG PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. Millimeters Min. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G n n n n A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Inches Max. Min. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55 M.N MAXIMUM TORQUE VALUE : 0.70 M.N Ordering type Marking Package Weight Base qty Delivery mode STPS20L25CT STPS20L25CT TO-220AB 2.23g 50 Tube STPS20L25CG STPS20L25CG D2PAK 1.48g 50 Tube STPS20L25CG-TR STPS20L25CG D2PAK 1.48g 1000 Tape & reel EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5