STPS1045D/F ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 10 A VRRM 45 V VF 0.57 V A K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP INSULATED PACKAGE:ISOWATT220AC Insulating voltage = 2000V DC Capacitance = 12pF A A K TO-220AC STPS1045D K ISOWATT220AC STPS1045F DESCRIPTION Single chip Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 30 A 10 A IF(AV) Average forward current δ = 0.5 TO-220AC Tc = 150°C ISOWATT220AC Tc = 145°C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A IRRM Repetitive peak reverse current tp = 2 µs F = 1KHz 1 A Tstg Storage temperature range - 65 to + 175 °C 175 °C 10000 V/µs Tj dV/dt Maximum junction temperature Critical rate of rise of reverse voltage September 1999 - Ed: 3B 1/5 STPS1045D/F THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Value Unit TO-220AC 2.2 °C/W ISOWATT220AC 4.5 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Typ. VR = VRRM Max. Unit 100 µA 15 mA V Tj = 125°C VF ** Forward voltage drop Pulse test : Tj = 25°C IF = 15 A 0.84 Tj = 125°C IF = 15 A 0.72 Tj = 125°C IF = 7.5 A 0.57 * tp = 5 ms,δ < 2 % ** tp = 380 µs, δ< 2% To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average current versus ambient temperature (δ : 0.5). PF(av)(W) IF(av)(A) 8 δ = 0.1 δ = 0.05 7 δ = 0.2 12 δ = 0.5 Rth(j-a)=Rth(j-c) 10 TO220AC 6 δ=1 5 8 4 6 3 1 IF(av) (A) 0 2/5 1 2 3 4 5 6 7 δ=tp/T 8 9 10 Rth(j-a)=15°C/W 4 T 2 0 ISOWATT220 T 2 tp 11 12 0 δ=tp/T 0 25 Tamb(°C) tp 50 75 100 125 150 175 STPS1045D/F Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC). IM(A) 160 140 120 100 80 Tc=50°C 60 Tc=100°C 40 Tc=150°C IM 20 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Zth(j-c)/Rth(j-c) 0.8 0.8 0.2 δ = 0.5 0.6 0.4 δ = 0.2 T δ = 0.1 0.0 1E-4 Tc=150°C t t(s) δ=0.5 1E-2 1E-1 1E+0 Zth(j-c)/Rth(j-c) 1.0 0.4 Tc=100°C Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). 1.0 0.6 Tc=50°C 0.2 tp(s) Single pulse 1E-3 δ=tp/T 1E-2 tp 1E-1 δ = 0.5 δ = 0.2 T δ = 0.1 tp(s) Single pulse 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 0.0 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 1E+1 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(µA) 1000 1E+5 F=1MHz Tj=25°C Tj=150°C 1E+4 1E+3 500 Tj=125°C Tj=100°C 1E+2 Tj=75°C 1E+1 Tj=50°C 200 Tj=25°C 1E+0 VR(V) VR(V) 1E-1 0 5 10 15 20 25 30 35 40 45 100 1 2 5 10 20 50 3/5 STPS1045D/F Fig. 7: Forward voltage drop versus forward current (maximum values). IFM(A) 100.0 Tj=125°C (Typical values) 10.0 Tj=125°C Tj=25°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. A H2 C L5 L7 ØI L6 L2 D L9 F1 L4 E G Min. Max. Min. Max. 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 4/5 Inches A L2 M F Millimeters 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 STPS1045D/F PACKAGE MECHANICAL DATA ISOWATT220AC DIMENSIONS A H REF. B Millimeters Diam Min. L6 L7 L2 Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.40 2.75 0.094 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 H 10.00 10.40 0.394 0.409 L3 F1 L2 F D G 16.00 0.630 L3 28.60 30.60 1.125 1.205 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.0126 E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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