STMICROELECTRONICS STS3DPFS30

STS3DPFS30
®
P - CHANNEL 30V - 0.065Ω - 3A - S0-8
MOSFET PLUS SCHOTTKY RECTIFIER

STripFET
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
V DSS
R DS(on)
ID
30V
0.09Ω
3A
SCHOTTKY
IF(AV)
V RRM
V F(MAX)
3A
30V
0.51V
SO-8
DESCRIPTION:
This product associates the latest low voltage
StripFET  in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
Parameter
Drain-source Voltage (V GS = 0)
Drain- gate Voltage (R GS = 20 kΩ)
30
V
30
V
V
3
A
Drain Current (continuous) at T c = 100 C
1.9
A
Drain Current (pulsed)
12
A
2
W
Drain Current (continuous) at T c = 25 o C
ID
o
P tot
Unit
± 20
Gate-source Voltage
ID
IDM (•)
Value
Total Dissipation at T c = 25 o C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V RRM
I F(RMS)
Parameter
Value
Unit
Repetitive Peak Reverse Voltage
30
V
RMS Forward Current
20
A
o
I F(AV)
Average Forward Current
T L =125 C
δ =0.5
3
A
I FSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
A
I RRM
Repetitive Peak Reverse Current
tp=2 µs
F=1 kHz
1
A
I RSM
Non Repetitive Peak Reverse Current
tp=100 µs
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 1999
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STS3DPFS30
THERMAL DATA
R thj-amb
R thj-amb
T stg
Tj
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range
Maximum
Junction Temperature
(*) mounted on FR-4 board (steady state)
o
85
100
-65 to 150
150
o
C/W
C/W
o
C
o
C
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
V GS = 0
I DSS
Zero
Gate
Voltage V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body
Leakage V GS = ± 20 V
Current (V DS = 0)
Min.
Typ.
Max.
30
Unit
V
T c = 125 o C
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
I D = 250 µA
R DS(on)
Static Drain-source On V GS = 10V
Resistance
I D = 1.5 A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.065
0.09
Ω
3
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Forward
Transconductance
Test Conditions
V DS > I D(on) x R DS(on)max
V DS = 25 V
Input Capacitance
Output Capacitance
Reverse
Transfer
Capacitance
f = 1 MHz
I D =1.5 A
V GS = 0
Min.
Typ.
Max.
Unit
5
S
1600
500
125
pF
pF
pF
STS3DPFS30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay Time
Rise Time
V DD = 15 V
I D = 1.5 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
15
29
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 15 V
23
4.2
5.8
30
nC
nC
nC
Typ.
Max.
Unit
ID = 3 A
VGS = 10 V
ns
ns
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V clamp = 24 V
ID = 3 A
R G = 4.7 Ω
V GS = 10 V
(Inductive Load, see fig. 5)
ns
ns
ns
11
11
23
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
I SDM (•)
Source-drain Current
Source-drain
Current
(pulsed)
V SD (∗)
Forward On Voltage
t rr
Q rr
I RRM
Reverse
Time
Reverse
Charge
Reverse
Current
Test Conditions
I SD = 3 A
Min.
Typ.
V GS = 0
Max.
Unit
3
12
A
A
2
V
Recovery I SD = 3 A
di/dt = 100 A/µs
V DD = 15V
T j = 150 o C
Recovery (see test circuit, figure 5)
34
ns
45
nC
Recovery
2.6
Α
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
IR (∗)
V F (∗)
Parameter
Reversed
Current
Test Conditions
o
Leakage T J= 25 C
T J= 125 o C
Forward Voltage drop
T J= 25 o C
T J= 125 o C
Min.
Typ.
Max.
Unit
V R =30V
V R =30V
0.03
0.2
100
mA
mA
I F =3A
I F =3A
0.46
0.51
0.46
V
V
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STS3DPFS30
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
5.0
0.188
0.196
6.2
0.228
c1
45 (typ.)
D
4.8
E
5.8
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS3DPFS30
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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