STS5PF20V P-CHANNEL 20V - 0.065Ω - 5A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STS5PF20V ■ ■ ■ ■ VDSS RDS(on) ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ POWER MANAGEMENT IN CELLULAR PHONES ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STS5PF20V S5PF20V SO-8 TAPE & REEL March 2004 1/8 STS5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V Gate- source Voltage ±8 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.1 A Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 2.5 W IDM () PTOT () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max 50 °C/W Max. Operating Junction Temperature –55 to 150 °C Storage Temperature –55 to 150 °C ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 8V ±100 nA Max. Unit IDSS IGSS Test Conditions Min. Typ. Max. 20 Unit V ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5V, ID = 2.5 A 0.065 0.080 Ω VGS = 2.5V, ID = 2.5 A 0.085 0.10 Ω Typ. Max. Unit 0.45 V DYNAMIC 2/8 Symbol Parameter gfs (1) Forward Transconductance VDS = 15 V , ID = 2.5 A Test Conditions Min. 6.6 S Ciss Input Capacitance VDS = 15 V, f = 1 MHz, VGS = 0 412 pF Coss Output Capacitance 179 pF Crss Reverse Transfer Capacitance 42.5 pF STS5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 11 ns Rise Time VDD = 10 V, ID = 2.5 A RG = 4.7Ω VGS = 2.5 V (see test circuit, Figure 1) 47 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 5 A, VGS = 2.5V (see test circuit, Figure 2) 4.5 0.73 1.75 6 nC nC nC Typ. Max. Unit Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 10 V, ID = 2.5 A, RG = 4.7Ω, VGS = 2.5 V (see test circuit, Figure 1) 39 20 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (1) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 5 A Source-drain Current (pulsed) 20 A Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 16 V, Tj = 150°C (see test circuit, Figure 3) Min. Typ. 1.2 32 12.8 0.8 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/8 STS5PF20V Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Transfer Characteristics Static Drain-source On Resistance STS5PF20V Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS5PF20V SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MIN. TYP. 1.75 0.1 0.003 0.009 0.025 0.033 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch MAX. 0.064 0.85 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS5PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8