STT5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STT5PF20V ■ ■ ■ ■ VDSS RDS(on) ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. SOT23-6L INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOBILE PHONE APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STT5PF20V STPN SOT23-6L TAPE & REEL October 2003 1/8 STT5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V Gate- source Voltage ±8 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.1 A Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 1.6 W IDM () PTOT () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max 78 °C/W Max. Operating Junction Temperature 150 °C –55 to 150 °C Storage Temperature ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 20 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA Max. Unit VGS = ± 8V ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5V, ID = 2.5 A 0.065 0.080 Ω VGS = 2.5V, ID = 2.5 A 0.085 0.10 Ω Typ. Max. Unit 0.45 V DYNAMIC 2/8 Symbol Parameter gfs (1) Forward Transconductance VDS = 15 V , ID = 2.5 A Test Conditions Min. 6.6 S Ciss Input Capacitance VDS = 15 V, f = 1 MHz, VGS = 0 412 pF C oss Output Capacitance 179 pF Crss Reverse Transfer Capacitance 42.5 pF STT5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 11 ns Rise Time VDD = 10 V, ID = 2.5 A RG = 4.7Ω VGS = 2.5 V (see test circuit, Figure 1) 47 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 5 A, VGS = 2.5V (see test circuit, Figure 2) 4.5 0.73 1.75 nC nC nC Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 10 V, ID = 2.5 A, RG = 4.7Ω, VGS = 2.5 V (see test circuit, Figure 1) Typ. Max. 38 20 Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (1) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 5 A Source-drain Current (pulsed) 20 A Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 16 V, Tj = 150°C (see test circuit, Figure 3) Min. Typ. 1.2 32 12.8 0.8 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/8 STT5PF20V Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Junction-PCB Transfer Characteristics Static Drain-source On Resistance STT5PF20V Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STT5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STT5PF20V TSOP-6 MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 7/8 STT5PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8