STMICROELECTRONICS STS4PF20V

STS4PF20V
P-CHANNEL 20V - 0.090 Ω - 4A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
■
■
■
■
TYPE
VDSS
STS4PF20V
20 V
RDS(on)
< 0.11 Ω ( @ 4.5 V )
< 0.135 Ω ( @ 2.7 V )
ID
4A
TYPICAL RDS(on) = 0.090 Ω @ 4.5 V
TYPICAL RDS(on) = 0.100 Ω @ 2.7 V
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOBILE PHONE APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
± 12
V
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
4
A
ID
Drain Current (continuous) at TC = 100°C
2.5
A
IDM(•)
Ptot
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C
2.5
W
(•) Pulse width limited by safe operating area.
June 2002
.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
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STS4PF20V
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal
Max
Resistance Junction-ambient
Maximum Operating Junction Temperature
storage temperature
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t
[
50
150
-55 to 150
°C/W
°C
°C
10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12V
V(BR)DSS
Min.
Typ.
Max.
20
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5 V
VGS = 2.7 V
ID = 2 A
ID = 2 A
Min.
Typ.
0.6
V
0.090
0.100
0.110
0.135
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/8
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS=15V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V, f = 1 MHz, VGS = 0
ID=2 A
Min.
7.5
S
500
140
30
pF
pF
pF
STS4PF20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON (*)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 2 A
VDD = 10 V
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
38
39
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 10V ID= 4A VGS=4.5V
(see test circuit, Figure 2)
6.2
1
1.4
nC
nC
nC
SWITCHING OFF(*)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
ID = 2 A
VDD = 10 V
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 1)
54
12
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
ID = 4 A
Vclamp = 16 V
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 3)
46
11
15
ns
ns
ns
SOURCE DRAIN DIODE(*)
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 4 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 4 A
VDD = 15 V
Tj = 150°C
(Inductive Load, Figure 3)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
20
13
1.3
Max.
Unit
4
16
A
A
1.2
V
ns
nC
A
(*)Pulse width [ 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by TJMAX
Safe Operating Area
Thermal Impedance
3/8
STS4PF20V
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STS4PF20V
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
5/8
STS4PF20V
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
Fig. 2: Gate Charge test Circuit
STS4PF20V
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
7/8
STS4PF20V
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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